Datasheet

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LM195, LM395

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SNOSBO4C –JUNE 1999–REVISED APRIL 2013

LM195/LM395 Ultra Reliable Power Transistors

Check for Samples: LM195, LM395

For low-power applications (under 100 mA), refer to

FEATURES

the LP395 Ultra Reliable Power Transistor.

• Internal Thermal Limiting

The LM195/LM395 are available in the standard TO-

• Greater than 1.0A Output Current

3, Kovar TO-5, and TO-220 packages. The LM195 is

• 3.0 μA Typical Base Current

rated for operation from −55°C to +150°C and the

• 500 ns Switching Time

LM395 from 0°C to +125°C.

• 2.0V Saturation

Simplified Circuit

• Base Can be Driven up to 40V without Damage

• Directly Interfaces with CMOS or TTL

• 100% Electrical Burn-in

DESCRIPTION

The LM195/LM395 are fast, monolithic power

integrated circuits with complete overload protection.

These devices, which act as high gain power

transistors, have included on the chip, current limiting,

power limiting, and thermal overload protection

making them virtually impossible to destroy from any

type of overload. In the standard TO-3 transistor

power package, the LM195 will deliver load currents

in excess of 1.0A and can switch 40V in 500 ns.

The inclusion of thermal limiting, a feature not easily

available in discrete designs, provides virtually

absolute protection against overload. Excessive

power dissipation or inadequate heat sinking causes

the thermal limiting circuitry to turn off the device

preventing excessive heating.

The LM195 offers a significant increase in reliability

as well as simplifying power circuitry. In some

applications, where protection is unusually difficult,

such as switching regulators, lamp or solenoid drivers

where normal power dissipation is low, the LM195 is

especially advantageous.

The LM195 is easy to use and only a few precautions

need be observed. Excessive collector to emitter

voltage can destroy the LM195 as with any power

transistor. When the device is used as an emitter

follower with low source impedance, it is necessary to

insert a 5.0k resistor in series with the base lead to

prevent possible emitter follower oscillations.

Although the device is usually stable as an emitter

follower, the resistor eliminates the possibility of

Figure 1. 1.0 Amp Lamp Flasher

trouble without degrading performance. Finally, since

it has good high frequency response, supply

bypassing is recommended.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (20 pages)

PAGE 1
LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 LM195/LM395 Ultra Reliable Power Transistors Check for Samples: LM195, LM395 FEATURES 1 • • • • • • • • 2 Internal Thermal Limiting Greater than 1.0A Output Current 3.0 μA Typical Base Current 500 ns Switching Time 2.0V Saturation Base Can be Driven up to 40V without Damage Directly Interfaces with CMOS or TTL 100% Electrical Burn-in For low-power applications (under 100 mA), refer to the LP395 Ultra Reliable Power Transistor.
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LM195, LM395 SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 www.ti.com Connection Diagram Refer to RETS195H and RETS195K drawings of military LM195H and LM195K versions for specifications. Figure 2. TO-3 Metal Can Package Bottom View See Package Number NDS0002A Refer to RETS195H and RETS195K drawings of military LM195H and LM195K versions for specifications. Figure 3. TO-5 Metal Can Package Bottom View Case is Emitter Figure 4.
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LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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LM195, LM395 SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS (continued) (1) Parameter Thermal Resistance Junction to Case Conditions (3) LM195 Min Typ Max TO-3 Package (NDS) 2.3 TO-5 Package 12 TO-220 Package (NDE) (3) 4 LM395 Min Units Typ Max 3.0 2.3 3.0 °C/W 15 12 15 °C/W 4 6 °C/W Without a heat sink, the thermal resistance of the TO-5 package is about +150°C/W, while that of the TO-3 package is +35°C/W.
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LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (for NDS and NDE Packages) Collector Characteristics Short Circuit Current Figure 5. Figure 6. Bias Current Quiescent Current Figure 7. Figure 8. Base Emitter Voltage Base Current Figure 9. Figure 10.
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LM195, LM395 SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) (for NDS and NDE Packages) 6 Saturation Voltage Response Time Figure 11. Figure 12. Response Time 10V Transfer Function Figure 13. Figure 14. 36V Transfer Function Transconductance Figure 15. Figure 16.
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LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) (for NDS and NDE Packages) Small Signal Frequency Response Figure 17.
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LM195, LM395 SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 www.ti.
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LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 TYPICAL APPLICATIONS *Solid Tantalum Figure 18. 1.0 Amp Voltage Follower *Protects against excessive base drive **Needed for stability Figure 19.
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LM195, LM395 SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 www.ti.com Figure 20. Time Delay Figure 21. 1.0 MHz Oscillator †Solid Tantalum Figure 22. 1.
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LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 †Solid Tantalum Figure 23. 1.0 Amp Positive Voltage Regulator Figure 24. Fast Optically Isolated Switch Figure 25. Optically Isolated Power Transistor Figure 26. CMOS or TTL Lamp Interface Figure 27.
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LM195, LM395 SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 www.ti.com *Drive Voltage 0V to ≥ 10V ≤ 42V Figure 28. 40V Switch Figure 29. 6.0V Shunt Regulator with Crowbar Figure 30.
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LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 Turn ON = 350 mV Turn OFF = 200 mV Figure 31. Low Level Power Switch T = R1C R2 = 3R1 R2 ≤ 82k Figure 32. Power One-Shot *Need for Stability Figure 33.
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LM195, LM395 SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 www.ti.com Figure 34. High Input Impedance AC Emitter Follower *Prevents storage with fast fall time square wave drive Figure 35.
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LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 *Adjust for 50 mA quiescent current †Solid Tantalum Figure 36. Power Op Amp *Sixty turns wound on Arnold Type A-083081-2 core. **Four devices in parallel †Solid tantalum Figure 37. 6.
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LM195, LM395 SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 www.ti.com REVISION HISTORY Changes from Revision B (April 2013) to Revision C • 16 Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 1-Nov-2013 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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MECHANICAL DATA NDE0003B www.ti.
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