Datasheet

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Features

➤

Fast charge and conditioning of

nickel cadmium or nickel-metal

hydride batteries

➤

Hysteretic PWM switch-mode

current regulation or gated con

trol of an external regulator

➤

Easily integrated into systems or

used as a stand-alone charger

➤

Pre-charge qualification of tem

perature and voltage

➤

Configurable, direct LED outputs

display battery and chargestatus

➤

Fast-charge termination by ∆ tem

perature/∆ time, peak volume de

tection, -∆V, maximum voltage,

maximum temperature, and maxi-

mum time

➤ Optional top-off charge and

pulsed current maintenance

charging

➤ Logic-level controlled low-power

mode (< 5µA standby current)

General Description

The bq2004E and bq2004H Fast

Charge ICs provide comprehensive

fast charge control functions together

with high-speed switching power con

trol circuitry on a monolithic CMOS

device.

Integration of closed-loop current

control circuitry allows the bq2004

to be the basis of a cost-effective so

lution for stand-alone and system-

integrated chargers for batteries of

one or more cells.

Switch-activated discharge-before-

charge allows bq2004E/H-based charg

ers to support battery conditioning

and capacity determination.

High-efficiency power conversion is

accomplished using the bq2004E/H as

a hysteretic PWM controller for

switch-mode regulation of the charg-

ing current. The bq2004E/H may al-

ternatively be used to gate an exter-

nally regulated charging current.

Fast charge may begin on application

of the charging supply, replacement

of the battery, or switch depression.

For safety, fast charge is inhibited

unless/until the battery tempera

ture and voltage are within config

ured limits.

Temperature, voltage, and time are

monitored throughout fast charge.

Fast charge is terminated by any of

the following:

Rate of temperature rise

(

∆

Peak voltage detection (PVD)

Negative delta voltage (-

∆

Maximum voltage

Maximum temperature

Maximum time

After fast charge, optional top-off

and pulsed current maintenance

phases with appropriate display

mode selections are available.

The bq2004H differs from the

bq2004E only in that fast charge,

hold-off, and top-off time units have

been scaled up by a factor of two,

and the bq2004H provides different

display selections. Timing differ-

ences between the two ICs are illus-

trated in Table 1. Display differ

ences are shown in Table 2.

Fast-Charge ICs

bq2004E/H

DCMD Discharge command

DSEL Display select

VSEL Voltage termination

select

Timer mode select 1

Timer mode select 2

TCO Temperature cutoff

TS Temperature sense

BAT Battery voltage

PN2004E01.eps

16-Pin Narrow DIP

or Narrow SOIC

INH

DIS

MOD

LED

SNS

DCMD

DSEL

VSEL

TCO

BAT

SNS Sense resistor input

LED

Charge status output 1

LED

Charge status output 2

System ground

5.0V

10% power

MOD Charge current control

DIS Discharge control

output

INH

Charge inhibit input

Pin Connections

SLUS081A - APRIL 2005

Pin Names

Summary of content (18 pages)

PAGE 1
bq2004E/H Fast-Charge ICs Features General Description ture and voltage are within configured limits. ➤ Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004E and bq2004H Fast Charge ICs provide comprehensive fast charge control functions together with high-speed switching power control circuitry on a monolithic CMOS device. Temperature, voltage, and time are monitored throughout fast charge.
PAGE 2
bq2004E/H SNS Pin Descriptions DCMD SNS controls the switching of MOD based on an external sense resistor in the current path of the battery. SNS is the reference potential for both the TS and BAT pins. If SNS is connected to VSS, then MOD switches high at the beginning of charge and low at the end of charge. Discharge-before-charge control input The DCMD input controls the conditions that enable discharge-before-charge. DCMD is pulled up internally.
PAGE 3
bq2004E/H Functional Description Discharge-Before-Charge Figure 2 shows a block diagram and Figure 3 shows a state diagram of the bq2004E/H. The DCMD input is used to command discharge-beforecharge via the DIS output. Once activated, DIS becomes active (high) until VCELL falls below VEDV, at which time DIS goes low and a new fast charge cycle begins. Battery Voltage and Temperature Measurements The DCMD input is internally pulled up to VCC (its inactive state).
PAGE 4
bq2004E/H TM1 TM2 TCO Timing Control TCO Check OSC LED1 LED2 DSEL TS LTF Check Display Control VTS - VSNS DCMD DVEN VBAT - VSNS Charge Control State Machine A/D SNS EDV Check Discharge Control MOD Control PWR Control DIS MOD INH MCV Check BAT VCC VSS BD200401.eps Figure 2. Block Diagram Fast charge continues until termination by one or more of the six possible termination conditions: The valid temperature range is VHTF < VTEMP < VLTF, where: VLTF = 0.
PAGE 5
bq2004E/H VSEL Input Low Float High ∆T/∆t Termination Voltage Termination Disabled The bq2004E/H samples at the voltage at the TS pin every 34s, and compares it to the value measured two samples earlier. If VTEMP has fallen 16mV ±4mV or more, fast charge is terminated. The ∆T/∆t termination test is valid only when VTCO < VTEMP < VLTF. -∆V PVD Voltage Sampling Temperature Sampling Each sample is an average of voltage measurements.
PAGE 6
bq2004E/H Table 2.
PAGE 7
bq2004E/H Maximum charge time is configured using the TM pin. Time settings are available for corresponding charge rates of C/4, C/2, 1C, and 2C. Maximum time-out termination is enforced on the fast-charge phase, then reset, and enforced again on the top-off phase, if selected. There is no time limit on the trickle-charge phase. Charge Current Control Top-off Charge When used in switch mode configuration, the nominal regulated current is: The bq2004E/H controls charge current through the MOD output pin.
PAGE 8
bq2004E/H New Charge Cycle Started by Any One of: Falling Edge on DCMD VCC Rising to Valid Level Yes Battery Replacement (VCELL Falling through VMCV) DCMD Tied to Ground? Inhibit (INH) Released No VEDV < VCELL < VMCV Charge Pending VCELL < VEDV Battery Voltage? VCELL < VEDV VTEMP > VLTF or VTEMP < VHTF Top-Off and Pulse-Trickle Charge Battery Temperature? DischargeBefore-Charge VCELL > VMCV VCELL > VMCV VCELL > VMCV VHTF < VTEMP < VLTF Battery Absent VEDV < VCELL < VMCV and VHTF < VTEMP <
PAGE 9
bq2004E/H Absolute Maximum Ratings Symbol Parameter Minimum Maximum Unit VCC VCC relative to VSS -0.3 +7.0 V VT DC voltage applied on any pin excluding VCC relative to VSS -0.3 +7.0 V TOPR Operating ambient temperature -20 +70 °C TSTG Storage temperature -55 +125 °C TSOLDER Soldering temperature - +260 °C TBIAS Temperature under bias -40 +85 °C Note: VSNSHI VSNSLO Commercial 10 sec max. Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
PAGE 10
bq2004E/H Recommended DC Operating Conditions (TA = TOPR) Symbol Condition Minimum Typical Maximum Unit Notes VCC Supply voltage 4.5 5.0 5.5 V VBAT Battery input 0 - VCC V VCELL BAT voltage potential 0 - VCC V VTS Thermistor input 0 - VCC V VTEMP TS voltage potential 0 - VCC V VTS - VSNS VTCO Temperature cutoff 0.2 * VCC - 0.4 * VCC V Valid ∆T/∆t range Logic input high 2.0 - - V DCMD, INH Logic input high VCC - 0.
PAGE 11
bq2004E/H Impedance Symbol Parameter Minimum Typical Maximum Unit RBAT Battery input impedance 50 - - MΩ RTS TS input impedance 50 - - MΩ RTCO TCO input impedance 50 - - MΩ RSNS SNS input impedance 50 - - MΩ Timing Symbol (TA = 0 to +70°C; VCC ± 10%) Parameter tPW Pulse width for DCMD and INH pulse command dFCV Time base variation fREG Minimum Typical Maximum Unit Notes 1 - - µs Pulse start for charge or discharge before charge -16 - 16 % VCC = 4.75V to 5.
PAGE 12
bq2004E/H 16-Pin DIP Narrow (PN) 16-Pin PN (0.300" DIP) Inches 12 Millimeters Dimension Min. Max. Min. Max. A 0.160 0.180 4.06 4.57 A1 0.015 0.040 0.38 1.02 B 0.015 0.022 0.38 0.56 B1 0.055 0.065 1.40 1.65 C 0.008 0.013 0.20 0.33 D 0.740 0.770 18.80 19.56 E 0.300 0.325 7.62 8.26 E1 0.230 0.280 5.84 7.11 e 0.300 0.370 7.62 9.40 G 0.090 0.110 2.29 2.79 L 0.115 0.150 2.92 3.81 S 0.020 0.040 0.51 1.
PAGE 13
bq2004E/H 16-Pin SOIC Narrow (SN) 16-Pin SN (0.150" SOIC) Inches D e B E H A C A1 .004 L 13 Millimeters Dimension Min. Max. Min. Max. A 0.060 0.070 1.52 1.78 A1 0.004 0.010 0.10 0.25 B 0.013 0.020 0.33 0.51 C 0.007 0.010 0.18 0.25 D 0.385 0.400 9.78 10.16 E 0.150 0.160 3.81 4.06 e 0.045 0.055 1.14 1.40 H 0.225 0.245 5.72 6.22 L 0.015 0.035 0.38 0.
PAGE 14
bq2004E/H Data Sheet Revision History Change No. Page No. 1 All 2 3 Description Nature of Change Combined bq2004E and bq2004H, revised and expanded format of this data sheet Clarification 7 Separated bq2004E and bq2004H in Table 2, LED Output Summary Clarification 5 Description of charge-pending state Clarification 9 Corrected VSNSLO tolerance Was: ±0.010 Is: ±0.025 4 5 Note: Change 1 = Oct. 1997 B changes from Sept. 1996 (bq2004E), Feb. 1997 (bq2004H). Change 2 = Feb.
PAGE 15
bq2004E/H Ordering Information bq2004 Package Option: PN = 16-pin narrow plastic DIP SN = 16-pin narrow SOIC Device: E = bq2004E Fast-Charge IC H= bq2004H Fast-Charge IC 15
PAGE 16
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant BQ2004ESNTR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1 BQ2004HSNTR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.
PAGE 17
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ2004ESNTR SOIC D 16 2500 367.0 367.0 38.0 BQ2004HSNTR SOIC D 16 2500 367.0 367.0 38.
PAGE 18
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