Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - battery management Charge management NiCd, NiMH SOIC 8 Surface-mount

Features

➤

Fast charge of nickel cadmium

or nickel-metal hydride batter

ies

➤

Direct LED output displays

charge status

➤

Fast-charge termination by -

∆

maximum voltage, maximum

temperature, and maximum

time

➤

Internal band-gap voltage ref

erence

➤

Optional top-off charge

➤

Selectable pulse trickle charge

rates

➤

Low-power mode

➤

8-pin 300-mil DIP or 150-mil

SOIC

General Description

The bq2002E and bq2002G Fast-

Charge ICs are low-cost CMOS bat

tery-charge controllers providing reli

able charge termination for both NiCd

and NiMH battery applications. Con

trolling a current-limited or con

stant-current supply allows the

bq2002E/G to be the basis for a cost-

effective stand-alone or system-inte

grated charger. The bq2002E/G inte

grates fast charge with optional top-off

and pulsed- trickle control in a single

IC for charging one or more NiCd or

NiMH battery cells.

Fast charge is initiated on application

of the charging supply or battery re

placement. For safety, fast charge is

inhibited if the battery temperature

and voltage are outside configured

limits.

Fast charge is terminated by any of

the following:

Peak voltage detection (PVD)

Negative delta voltage (-

∆

Maximum voltage

Maximum temperature

Maximum time

After fast charge, the bq2002E/G op

tionally tops-off and pulse-trickles the

battery per the pre-configured limits.

Fast charge may be inhibited using

the INH pin. The bq2002E/G may

also be placed in low-standby-power

mode to reduce system power con-

sumption.

The bq2002E differs from the

bq2002G only in that a slightly dif-

ferent set of fast-charge and top-off

time limits is available. All differ-

ences between the two ICs are illus-

trated in Table 1.

NiCd/NiMH Fast-Charge Management ICs

bq2002E/G

TM Timer mode select input

LED

Charging status output

BAT Battery voltage input

System ground

PN-200201.eps

8-Pin DIP or

Narrow SOIC

LED

BAT

INH

TS Temperature sense input

Supply voltage input

INH Charge inhibit input

CC Charge control output

Pin Connections

Pin Names

SLUS132 - FEBRUARY 1999

bq2002E/G Selection Guide

Part No. LBAT TCO HTF LTF

-∆V

PVD Fast Charge t

MTO

Top-Off Maintenance

bq2002E

0.175

∗

0.5

∗

0.6

∗

None

✔

C/2 200 None C/32

✔

1C 80 C/16 C/32

✔

2C 40 None C/32

bq2002G

0.175

∗

0.5

∗

0.6

∗

None

✔

C/2 160 None C/32

✔

1C 80 C/16 C/32

✔

2C 40 None C/32

Summary of content (15 pages)

PAGE 1
bq2002E/G NiCd/NiMH Fast-Charge Management ICs Features General Description ➤ The bq2002E and bq2002G FastCharge ICs are low-cost CMOS battery-charge controllers providing reliable charge termination for both NiCd and NiMH battery applications. Controlling a current-limited or constant-current supply allows t h e bq2002E/G to be the basis for a costeffective stand-alone or system-integrated charger.
PAGE 2
bq2002E/G sumes operation at the point where initially suspended. Pin Descriptions TM Timer mode input Charge control output CC A three-level input that controls the settings for the fast charge safety timer, voltage termination mode, top-off, pulse-trickle, and voltage hold-off time. LED An open-drain output used to control the charging current to the battery. CC switching to high impedance (Z) enables charging current to flow, and low to inhibit charging current.
PAGE 3
bq2002E/G Chip on 4.0V VCC Battery Voltage too High? VBAT > 2V VBAT < 2V Battery Voltage too Low? VBAT < 0.175 VCC 0.175 VCC < VBAT VTS > 0.6 (PVD or - V or Maximum Time Out) and TM = Low VCC Battery Temperature? VTS < 0.6 VCC Charge Pending Fast LED = Low VBAT > 2V or VTS < VCC/2 or ((PVD or - V or Maximum Time Out) Low) and TM Top-off LED = Z VBAT > 0.
PAGE 4
bq2002E/G VCC = 0 Fast Charging Top-Off (optional) See Table 1 73ms CC Output Fast Charging Pulse-Trickle 1.17s 1.17s Charge initiated by application of power Charge initiated by battery replacement LED TD2002EG.eps Figure 4. Charge Cycle Phases A ground-referenced negative temperature coefficient thermistor placed near the battery may be used as a low-cost temperature-to-voltage transducer.
PAGE 5
bq2002E/G VLBAT = 0.175 ∗ VCC ±20% The response of the IC to pulses less than 100ns in width or between 3.5ms and 12ms is indeterminate. Tolerance on all timing is ±12%. The valid temperature range is VTS > VHTF where VHTF = 0.6 ∗ VCC ±5%. Voltage Termination Hold-off If the battery voltage or temperature is outside of these limits, the IC pulse-trickle charges until the next new charge cycle begins. A hold-off period occurs at the start of fast charging.
PAGE 6
bq2002E/G rate, and voltage hold-off period options. Table 1 describes the states selected by the TM pin. The midlevel selection input is developed by a resistor divider between VCC and ground that fixes the voltage on TM at VCC/2 ± 0.5V. See Figure 4. Low-Power Mode Charge Status Indication Both the CC pin and the LED pin are driven to the high-Z state. The operating current is reduced to less than 1µA in this mode.
PAGE 7
bq2002E/G Absolute Maximum Ratings Symbol Parameter Minimum Maximum Unit VCC VCC relative to VSS -0.3 +7.0 V VT DC voltage applied on any pin excluding VCC relative to VSS -0.3 +7.0 V TOPR Operating ambient temperature TSTG Storage temperature TSOLDER Soldering temperature TBIAS Temperature under bias Note: +70 °C +85 °C - +260 °C -40 +85 °C Commercial 10 sec max. Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
PAGE 8
bq2002E/G Recommended DC Operating Conditions (TA = 0 to 70°C) Symbol Condition Minimum Typical Maximum Unit 4.0 5.0 6.0 V Notes VCC Supply voltage VDET -∆V, PVD detect voltage 1 - 2 V VBAT Battery input 0 - VCC V VTS Thermistor input 0.5 - VCC V VTS < 0.5V prohibited VIH Logic input high 0.5 - - V INH Logic input high VCC - 0.5 - - V TM Logic input mid VCC - + 0.5 V TM VIM 2 VIL - 0.5 VCC 2 Logic input low - - 0.1 V INH Logic input low - - 0.
PAGE 9
bq2002E/G Impedance Symbol Parameter Minimum Typical Maximum Unit RBAT Battery input impedance 50 - - MΩ RTS TS input impedance 50 - - MΩ Timing Symbol (TA = 0 to +70°C; VCC ± 10%) Parameter Minimum Typical Maximum Unit dFCV Time base variation -12 - 12 % t DLY Start-up delay 0.35 - 0.9 s Note: Typical is at TA = 25°C, VCC = 5.0V.
PAGE 10
bq2002E/G 8-Pin DIP (PN) 8-Pin PN (0.300" DIP) Inches Min. Max. Min. Max. A 0.160 0.180 4.06 4.57 A1 0.015 0.040 0.38 1.02 B 0.015 0.022 0.38 0.56 B1 0.055 0.065 1.40 1.65 C 0.008 0.013 0.20 0.33 D 0.350 0.380 8.89 9.65 E 0.300 0.325 7.62 8.26 E1 0.230 0.280 5.84 7.11 D E1 E A B1 A1 L C B S e Millimeters Dimension e 0.300 0.370 7.62 9.40 G 0.090 0.110 2.29 2.79 L 0.115 0.150 2.92 3.81 S 0.020 0.040 0.51 1.
PAGE 11
PACKAGE OPTION ADDENDUM www.ti.
PAGE 12
PACKAGE OPTION ADDENDUM www.ti.com 7-May-2007 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PAGE 13
PACKAGE MATERIALS INFORMATION www.ti.com 19-Mar-2008 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel Diameter Width (mm) W1 (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant BQ2002ESNTR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 BQ2002GSNTR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.
PAGE 14
PACKAGE MATERIALS INFORMATION www.ti.com 19-Mar-2008 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ2002ESNTR SOIC D 8 2500 340.5 338.1 20.6 BQ2002GSNTR SOIC D 8 2500 340.5 338.1 20.
PAGE 15
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