M o n a r c h P l a t f o r m - G M 01 Q M o d u l e Datasheet SEQUANS Communications 15-55 Boulevard Charles de Gaulle 92700 Colombes, France Phone. +33.1.70.72.16.00 Fax. +33.1.70.72.16.09 www.sequans.com contact@sequans.
Preface Legal Notices Copyright ©2017-2018, SEQUANS Communications All information contained herein and disclosed by this document is confidential and the proprietary property of SEQUANS Communications, and all rights therein are expressly reserved. Acceptance of this material signifies agreement by the recipient that the information contained in this document is confidential and that it will be used solely for the purposes set forth herein.
Document Revision History Revision ii Date Product Application 05 August 2018 Fifth edition of the document. 06 September 2018 Sixth edition of the document. 07 November 2018 Seventh edition of the document. See list of changes in Section Changes in this Document on page iii.
About this Datasheet Purpose and Scope The GM01Q is a complete certified LTE Category M1 module including base-band, RF and memory, for the design of connected machine-to-machine devices, and other Internet-of-Things devices with embedded LTE connectivity. This document provides technical information about GM01Q LGA module. GM01Q is based on Sequans’ Monarch platform. Who Should Read this Datasheet This document is intended for engineers who are developing User Equipment (UE) for LTE systems.
References [1] Core technology specifications: • 3GPP E-UTRA 21 series Release 13 (EPS) • 3GPP E-UTRA 22 series Release 13 (IMEI) • 3GPP E-UTRA 23 series Release 13 (NAS, SMS) • 3GPP E-UTRA 24 series Release 13 (NAS) • 3GPP E-UTRA 31 series Release 13 (UICC) • 3GPP E-UTRA 33 series Release 13 (security) • 3GPP E-UTRA 36 series Release 13 (RAN) • 3GPP2 C.S0015-A v1.0 (SMS) • IETF, RFC 3261, 4861, 4862, 6434 For more information, see • ftp://ftp.3gpp.org/Specs/archive/ • http://www.3gpp2.
Documentation Conventions This section illustrates the conventions that are used in this document. General Conventions Note Important information requiring the user’s attention. Caution A condition or circumstance that may cause damage to the equipment or loss of data. Warning A condition or circumstance that may cause personal injury. Italics Italic font style denotes • emphasis of an important word; • first use of a new term; • title of a document.
Table of Contents Preface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Legal Notices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii About this Datasheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Table of Contents 3.12 Mounting Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Chapter 4 Signal and Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.1 GM01Q Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.2 UART Interfaces. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Product Features 1 1.1 Features Description Sequans GM01Q module includes Monarch SQN3330 Cat-M1 baseband, a complete dual band RF front end, memory and required circuitry to meet 3GPP E-UTRA (Long Term Evolution - LTE, Release 13) Cat-M1 UE specifications. For more information on the core technology specifications see the section References on page iv. The term GM01Q module refers to the hardware and the associated embedded software.
PRODUCT FEATURES FEATURES DESCRIPTION GM01Q’s ECCN and part number are detailed in the Section 3.1 ECCN and Part Number on page 7.
PRODUCT FEATURES FEATURES DESCRIPTION Table 1-2: LTE Features (Continued) PHY • One UL and one DL transceiver • Support of HD-FDD Duplexing • Channel 1.
2 Regulatory Approval Note: This section applies to GM01R63QR5 and GM01R63QR7 part numbers. Attention GM01R63QR5 FCC-ID: 2AAGMGM01Q (single modular approval) GM01R63QR7 FCC-ID: 2AAGMGM01QA (single modular approval) This above identified LTE radio module is not intended to be provided to end-users but is for installation by OEM integrators only.
REGULATORY APPROVAL Compliance with Unwanted Emission Limits for Digital Device If the OEM host integration fully complies with the above described reference design and can completely inherit and rest on compliance of the existing modular approval the OEM remains still responsible to show compliance of the overall end-product with the FCC limits for unwanted conducted and radiated emissions from the digital device (unintentional radio) portion of such end-product (commonly addressed as part 15B compliance
REGULATORY APPROVAL • Digital Device - Unwanted Emissions Notice If the end-product is or contains a digital device (unintentional radio portions) and is not exempted by its use case (like vehicular use) the following part 15.105 (b) user notice shall be provided at prominent location of the product literature: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC rules.
Physical Characteristics 3 3.1 ECCN and Part Number The orderable part numbers of the GM01Q module are as follows, according to the supported LTE bands. • GM01R63QR5 for mass production modules: LTE Bands 2, 4, 12 • GM01R63QR6 for mass production modules: LTE Bands 3, 28 • GM01R63QR7 for engineering samples: LTE Bands 1, 2, 3, 4, 5, 8, 12, 13, 14, 17, 18, 19, 20, 25, 26, 28, 66 Table 3-1 lists the FEM implemented in the module circuitry for each orderable part number.
PHYSICAL CHARACTERISTICS ELECTRICAL OPERATING CONDITIONS 3.2 Electrical Operating Conditions 3.2.1 Detailed Information Table 3-2 describes the electrical operating conditions for GM01Q. Table 3-2: Electrical Operating Conditions Direction Minimum Typical Maximum VBAT1 In 3.1 V SIM_VCC (1.8 V or 3.0 V) Out 1.62 V 1.8 V 1.98 V 2.7 V 3.0 V 3.3 V 4.5 V 1V8 See notes below. Out 1.71 V 1.8 V 1.89 V 3V0 See note 2 below. Out 2.85 V 3.0 V 3.15 V VCC1_PA In 2.85 V 3.0 V 3.
PHYSICAL CHARACTERISTICS ELECTRICAL OPERATING CONDITIONS 3.2.2 GM01Q Power Tree Figure 3-1 provides a representation of the power tree of the GM01Q. All current values are maximum RMS current. Note: SKY68001 is the Front-End module for GM01R63QR5 and GM01R63QR6. SKY68020 is the Front-End module for GM01R63QR7.
PHYSICAL CHARACTERISTICS ENVIRONMENTAL OPERATING CONDITIONS 3.2.3 Power Supplies Environment Figure 3-2 illustrates the connections between the RF front-end power supplies of the GM01Q. W 'DϬϭY ^YEϯϯϯϬ s dϭ ϯsϬ s ϮͺW s ϭͺW W ^
PHYSICAL CHARACTERISTICS POWER SUPPLY DIMENSIONING 3.4 Power Supply Dimensioning Important: - Information provided here is estimated peak current consumption for the GM01Q Module in various LTE Tx/Rx configurations, with and without the DC/DC losses. It represents the maximum RMS current. - The power consumption depends on LTE band of operation. The figures in Table 3-1 are provided for LTE Band 13 only. Please contact your Sequans’ representative for other LTE Bands figures.
PHYSICAL CHARACTERISTICS I/O CHARACTERISTICS 3.5 I/O Characteristics The voltage and current characteristics of the various IO pads of the GM01Q versus IO bank supply voltage are illustrated in the tables below. Caution: Note that the Voh values in the tables below do not apply to GPIOs configured in open drain mode. GPIOs can be individually configured in open drain mode. When in open drain mode they either drive the line to Vol, or leave it floating, to be pulled up by an external pullup resistance.
PHYSICAL CHARACTERISTICS I/O CHARACTERISTICS Table 3-4: DC Characteristics for Digital IOs, Voltage 1.8 V - BIDIR and IN Types Parameter Drive Strength Min. Nom. Max. VT Threshold Point 0.79 0.87 0.94 V VT+ Schmitt Trigger Low to High Threshold Point 1 1.12 1.22 V VTSchmitt Trigger High to Low Threshold Point 0.61 0.71 0.8 V VT PU Threshold Point with Pull-up Resistor Enabled 0.79 0.86 0.93 V VT PD Threshold Point with Pull-down Resistor Enabled 0.8 0.87 0.
PHYSICAL CHARACTERISTICS I/O CHARACTERISTICS Table 3-4: DC Characteristics for Digital IOs, Voltage 1.8 V - BIDIR and IN Types Parameter Drive Strength IOH High Level Output Current at VOH(max) Min. Nom. Max. Unit 2 mA 1.0 2.4 4.6 mA 4 mA 2.0 4.7 9.2 mA 8 mA 4.0 9.4 18.4 mA Max. Unit Table 3-5: DC Characteristics - IN_PMU Type Parameter Drive Strength Min. Nom. Max. Unit VIL Input Low Voltage 0 0.27 V VIH Input High Voltage 1.56 3.
PHYSICAL CHARACTERISTICS AUXILIARY ADC 3.6 Auxiliary ADC ADC specification is described in Table 3-7. Table 3-7: ADC Specification Value Performance Specification Description ADC voltage range ADC tolerance After calibration. The tolerance considered is the highest value between the percentage and the absolute voltage mentioned. ADC resolution Nominal resolution ADC input capacitance ADC input capacitance. See the note below to prevent current leakage in low-power mode.
PHYSICAL CHARACTERISTICS PERFORMANCE 3.7 Performance Table 3-8 and Table 3-9 present the GM01Q module’s performance in the supported LTE Bands. Table 3-8: Output Power GM01Q Module Version LTE Bands Conducted Power (dBm) Bandwidth 1.4 MHz, 6 RB GM01R63QR5 B2, B4, B12 23 +1/-1.7 GM01R63QR6 B3, B28 23 +1/-1.7 GM01R63QR7 B1, B2, B3, B4, B5, B8, B12, B13, B14, B17, B18, B19, B20, B25, B26, B28, B66 23 +1/-1.7 Table 3-9: RF Sensitivity GM01Q Module Version LTE Bands Typ.
PHYSICAL CHARACTERISTICS PACKAGE DESCRIPTION 3.9 Package Description 3.9.1 Module Footprint The module weight is 1.6 g.
PHYSICAL CHARACTERISTICS PACKAGE DESCRIPTION Figure 3-5: Module Detailed Bottom View and Dimensions GM01Q DATASHEET PROPRIETARY SEQUANS Communications 18
PHYSICAL CHARACTERISTICS PACKAGE DESCRIPTION 3.9.
PHYSICAL CHARACTERISTICS PACKING INFORMATION 3.10 Packing Information The module is delivered in Tape-and-Reel as described in Figure 3-7. The sizes indicated are in mm. Please zoom in the figure to read the numbers. Each reel contains up to 2000 modules. Each carton contains up to 5 reels.
PHYSICAL CHARACTERISTICS STORAGE CONDITIONS 3.11 Storage Conditions Note: Additional storage conditions impacting the mounting process are provided in Section 3.12 Mounting Considerations on page 22. The module is MSL3 compliant. 1. Calculated shelf life in sealed bag : 12 months at < 40°C and < 90% RH 2. Peak package body temperature: 250°C 3.
PHYSICAL CHARACTERISTICS MOUNTING CONSIDERATIONS 3.12 Mounting Considerations The GM01Q can support up to 3 reflows with 250°C maximum.
Signal and Pins 4 4.1 GM01Q Pinout The signals and all the related details are listed in the MS-Excel companion file delivered together with the present document in a PDF portfolio. The pads listed in Table 4-1 are connected to ground. Table 4-1: Ground and Thermal Pads Pad # Pad Name Comment 1 20 22 24 26 28 30 31 32 33 34 42 43 45 46 53 55 62 63 64 65 66 68 69 70 71 72 73 74 86 87 GND All GND pads shall be connected to the same copper.
SIGNAL AND PINS UART INTERFACES 4.2 UART Interfaces Figure 4-1 represents the typical implementation for the hardware flow control for UART0, UART1 and UART2. TXD and RXD signals are mandatory. RTS and CTS are strongly recommended. The other signals are optional. GM01Q is designed for use as DCE (Data Communication Equipment).
SIGNAL AND PINS POWER-UP SEQUENCE 4.3 Power-up Sequence The following timing requirement applies to the signals VBAT1, POWER_EN and RESET_N. It must be respected for proper GM01Q’s behavior. Note: The POWER_EN signal has no function for Monarch platform modules. It is mentioned here for compatibility reasons with Calliope platform modules.
SIGNAL AND PINS LTE LOW POWER MODE 4.4 LTE Low Power Mode 4.4.1 General Information Important: The GM01Q module is provided with an internal RTC whose supply is VBAT1. As a consequence, VBAT1 should not be removed, in order to keep RTC active. The GM01Q will automatically enter in low-power mode.
SIGNAL AND PINS LTE LOW POWER MODE 4.4.2 Detailed Behavior of IO Pads of BIDIR Type • Behavior in PS-P or Active Mode Figure 4-5 shows a simplified diagram of the Digital bi-directional IOs in PS-P or active mode. Figure 4-5: Digital Bi-Directional IOs in PS-P or Active Mode • Behavior in PS-PM In PS-PM the Digital bi-directional IOs are completly powered Off. In PS-PM the Digital bi-directional IOs can be seen as high-impedance from the outside.
SIGNAL AND PINS LTE LOW POWER MODE 4.4.3 Detailed Behavior of IO Pads of BIDIR_WAKE Type • Behavior in PS-P or Active Mode PMU bi-directional wake IOs are used as general purposed IO buffers in PS-P or active mode. Figure 4-6 shows a simplified diagram of the PMU bi-directional wake IOs in PS-P or active mode. Note: The PMU bi-directional wake IOs output buffer requires the 3.0V power supply to be ON.
SIGNAL AND PINS LTE LOW POWER MODE • Behavior in PS-PM. Note: The PMU bi-directional wake IOs output buffer is disabled in PS-PM. Figure 4-7 shows a simplified diagram of the PMU bi-directional wake IOs in PS-PM. Figure 4-7: PMU Wake IOs in PS-PM Mode In PS-PM, all PMU bi-directional wake IOs are high impedance with ultra low leakage current. This corresponds to a minimum impedance of 180 MOhm at the maximum input supply voltage of 3.6 V.
SIGNAL AND PINS LTE LOW POWER MODE Table 4-4 shows the values of the measured leakage current (measurements taken on silicon) for the PMU bi-directional wake IOs. Table 4-4: Measured leakage current for the PMU bi-directional wake IOs. Minimum 3 nA Typical 4 nA Maximum 12 nA Table 4-5 shows values of the external pull-up/pull-down resistor to be used on the PMU bi-directional wake IOs pads. Table 4-5: External pull-up/pull-down resistor to be used on the PMU bi-directional wake IOs Pads.
A Acronyms Acronym Definition AFE Analog Front-End APC Automatic Control Power CE Coverage Extension COO Country of origin CPU Central Processing Unit DC/DC Direct current converter DDR Double Data Rate (SDRAM) DL Downlink DPLL Digital Phase-Locked Loop ECCN Export Control Classification Number EPS Evolved Packet System ESD Electro-static discharge ETSI European Telecommunications Standard Institute FCC Federal Communications Commission (USA) GND Ground GPIO General Purpos
Acronym Definition IETF Internet Engineering Task Force. See https://www.ietf.org/ IMEI International Mobile Equipment Identity IMS Instant Messaging Service IP Internet Protocol JTAG Joint Test Action Group. See IEEE 1149.7 specification LDO Low Drop-Out regulator LGA Large Grid Array LNA Low-Noise Amplifier LTE Long Term Evolution, or 4G. Standard is developed by the 3GPP www.3gpp.org.
Acronym Definition RoHS Restriction of Hazardous Substances RTC Real-Time Clock Rx Reception S/N or SN: Serial Number SAW Surface Acoustic Wave (filters) SDM Socketed Device Model (ESD) SDRAM Synchronous Dynamic Random Access Memory SIM Subscriber Identification Module SMS Short Message Service SPI Serial Peripheral Interface TCXO Temperature-controlled crystal oscillator Tx Transmission UART Universal asynchronous receiver transmitter.