Datasheet

Features
PNP Transistors
• Silicon epitaxial planar transistors
• For switching and amplifier applications
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25°C)
Collector Base Voltage
V
CB
O
80
50 V
Collector Emitter Voltage
V
CE
O
65
45
V
Emitter Base Voltage V
EBO
5 V
Collector Current (DC) I
C
100 mA
Peak Collector Current I
CM
200 mA
Total Power Dissipation
P
tot
500 mW
Junction Temperature
T
j
150
O
C
Storage Temperature Range T
stg
- 65 to + 150
O
C
Characteristics at Ta = 25°C
Parameter Max. Unit
DC Current Gain
at V
CE
= 5 V,-I
C
= 2 mA
h
FE
h
FE
h
FE
110
200
420
220
450
800
-
-
-
Collector Base Cutoff Current
at V
CB
= 30 V
I
CBO
- 15 nA
Emitter Base Cutoff Current
at V
EB
= 5 V
I
EBO
- 100
nA
Collector Base Breakdown Voltage
at I
C
= 100 µA
V
(BR)CBO
80
50
-
- V
C
ollector Emitter Breakdow
n Voltage
at I
C
= 2 mA
V
(BR)CEO
65
45
-
- V
Emitter Base Breakdown Voltage
atI
E
= 100 µA
5 V
(BR)EBO
- V
RND BC556 (A,B,C)
RND BC557 (A,C), RND BC560 (C)
Symbol Min.
Symbol
Unit
Parameter
RND BC556 (A,B,C)
RND BC557 (A,C), RND BC560 (C)
RND BC556A, RND BC557A
RND BC556B
RND BC556C, RND BC557C, RND BC560C
RND BC556 (A,B,C)
RND BC557 (A,C), RND BC560 (C)
RND BC556 (A,B,C)
RND BC557 (A,C), RND BC560 (C)
Value
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