EC C25--A User Ma anual LTEM Module Series S Rev. EC25-A_ _User_Ma anual_V1 1.0 3-28 Date: 2016-03 www.quectel.
LTE L Module e EC25-AUser Manua al Our aim is to prov vide custo omers witth timely and comprehensiv ve service e. For any y assistanc ce, please contact our o compa any headquarters: W S Solutions C Ltd. Co., Quectel Wireless Office 501, Building 13,, No.99, Tian nzhou Road d, Shanghai,, China, 200 0233 Tel: +86 21 5108 6236 Mail:info@q quectel.com Or our loc cal office, for more informatio on, please e visit: http://www.q quectel.com m/support/salesupport.
LTE L Module e EC25-AUser Manua al Abou ut the e Doc cument History y Revision Date Author Descriptio on V1.
LTE L Module e EC25-AUser Manua al Contents s About the Document D .................................................................................................................................... 2 Contents ......................................................................................................................................................... 3 Table Index x ..................................................................................................................................
LTE L Module e EC25-AUser Manua al 3.11. 3.12. 3.13. 3.14. 3.15. 3.16. UART Interface ........................................................................................................................ 36 PCM and I2C Interfac ce ............................................................................................................ 38 ADC Function ..........................................................................................................................
LTE L Module e EC25-AUser Manua al Table Index TABLE 1: EC25 E SERIES FREQUENCY BAND DS ....................................................................................... 9 TABLE 2: EC25 E KEY FEATURES ............................................................................................................. 10 0 TABLE 3: IO O PARAMET TERS DEFIN NITION ................................................................................................ 16 6 TABLE 4: PIN P DESCRIPTION ....................
LTE L Module e EC25-AUser Manua al Figure In ndex FIGURE 1: FUNCTION NAL DIAGRA AM ....................................................................................................... 12 2 FIGURE 2: PIN ASSIGN NMENT (TO OP VIEW) ............................................................................................. 15 5 FIGURE 3: UART SLEE EP APPLICA ATION..................................................................................................
LTE L Module e EC25-AUser Manua al 1 In ntrod ductio on This docum ment defines the EC25m module and describes d its s air interface and hardw ware interfac ce which are e connected with w your ap pplication. This document can help p you quicklyy understand module interface speccifications, e electrical and dmechanica al details, as well w as other related info ormation of EC25 modu ule.
LTE L Module e EC25-AUser Manua al Cellular term C minals or mobiles m operratingover radio r freque ency signal and cellular n network can nnot be guarranteed to connect in alll conditions, for example no mobile e f or with an fee a invalid SIM card. While you are in this condittion and nee ed emergen nt h help, please e remember using emerrgency call.
LTE L Module e EC25-AUser Manua al 2 P Produ uct Co oncept 2.1. Gen neral Des scription EC25 is a series of FDD-LTE F /T TDD-LTE /W WCDMA/TD--SCDMA/CD DMA/GSM w wireless com mmunication n module with receive diversity, d wh hich provide es data con nnectivity on n FDD-LTE,, TDD-LTE,,DC-HSPA+ +, HSPA+, HS SDPA, HSUP PA, WCDMA A, TD-SCDMA, CDMA,,EDGE andG GPRSnetwo orks. It can also provide e 1) 2) GNSS and d voice functtionality forr your speciffic applicatio on.
LTE L Module e EC25-AUser Manua al 80LCC sign nal pads and d 64 other pa ads. 2.2. Dire ectives and Stand dards 2.2.1. FCC C Stateme ent Any Change es or modificcations not expressly e ap pproved by the t party ressponsible fo or complianc ce could void d the user’ss authority to o operate the e equipment. This device complies with w part 15 of o the FCC Rules.
LTE L Module e EC25-AUser Manua al SMS S cell broadccast SMS S storage: ME M by defaultt USIM Inte erface Supp port USIM/S SIM card: 1.8 8V, 3.
LTE L Module e EC25-AUser Manua al 2.4. Functional Diagram D The followin ng figure sho ows a block diagram of EC25 and illlustrates the e major funcctional parts. Power managemen nt Baseba and DDR+N NAND flash Radio frequency f Periphe eral interface e ANT_MAIN N ANT_G GNSS A ANT_DIV Switch SA AW Switch Duplex x LN NA SAW VBAT_RF APT PA A PRx D DRx Tx NAND DDR2 S SDRAM Transce eiver IQ Q VBAT_BB PMIC Con ntrol Control Y PWRKEY B Baseband d RESET_N ADCs 19.
LTE L Module e EC25-AUser Manua al 2.5. Evaluation Board B In order to help h youto develop d appllications with EC25, Quectel supplies an evaluation board (EVB), USB B data cable, earphone, antenna a and d other perip pherals to co ontrol or testt the module e.
LTE L Module e EC25-AUser Manua al 3 A Applic cation n Inte erface e 3.1. Gen neral Des scription EC25 is eq quipped witth an80-pin SMT pad plus 64-pin n ground pads p and re eserved pads that can n beconnecte ed to cellularr application platform. Sub-interface es included in these pads are descriibed in detaiil in the follow wing chapterrs: Power supply USIM in nterface USB interface UART interface i PCM in nterface ADC in nterface Status indication 3.2.
LTE L Module e EC25-AUser Manua al VBAT_RF GND RESERVED 57 56 55 18 58 R RESERVED 59 17 VBAT_RF U USIM_RST VBAT BB VBAT_BB U USIM_CLK 15 16 60 USIM_DATA VBAT_BB 14 61 U USIM_VDD STATUS 13 62 USIM_P PRESENCE RI 12 63 11 DBG_TXD DCD DBG_RXD 64 10 CTS U USIM_GND 65 9 RTS GND 66 GND 142 8 DTR R RESERVED 67 141 TXD R RESERVED 68 7 RXD VDD_EXT 69 6 USB_DP NET T_STATUS 70 5 USB_DM N NET_MODE 71 4 USB_VBUS W_ _DISABLE# 72 3 GND R RESERVED 113 2
LTE L Module e EC25-AUser Manua al 3.3. Pin Descripttion The followin ng tables sho ow the EC25’s pin defin nition. n Table 3: IO Parameterrs Definition Type Desc cription IO Bidirrectional input/output DI Digittal input DO Digittal output PI Powe er input PO Powe er output AI Analog input AO Analog output OD Open n drain Table 4: Pin n Descriptio on Power Supply Pin Name VBAT_BB VBAT_RF Pin No.
LTE L Module e EC25-AUser Manua al Turn on/offf Pin Name I/O Description n DC Charac cteristics DI Turnon/off the module. VIHmax=2.1V VIHmin=1.3V V VILmax=0.5V DI Reset the module. m VIHmax=2.1V VIHmin=1.3V V VILmax=0.5V I/O Description n DC Charac cteristics Commentt OD Indicate the e module operating sttatus. The drive cu urrent should be le ess than 0.9mA. Require ex xternal pull-up. If unused, u keep it ope en. DO Indicate the e module network reg gistration mode. VOHmin=1.
LTE L Module e EC25-AUser Manua al Vmax=3.05V Vmin=2.7V IOmax=50m mA USIM_DAT TA USIM_CLK K USIM_RST T USIM_ PRESENC CE 15 IO 16 DO 17 DO 13 Data signal of USIM card. Clock signa al of USIM card. Reset signa al of USIM card. For 1.8V US SIM: VILmax=0.6V VIHmin=1.2V V VOLmax=0.4 45V VOHmin=1.3 35V For 3.0V US SIM: VILmax=1.0V VIHmin=1.95 5V VOLmax=0.4 45V VOHmin=2.5 55V For 1.8V US SIM: VOLmax=0.4 45V VOHmin=1.3 35V For 3.0V US SIM: VOLmax=0.4 45V VOHmin=2.5 55V For 1.8V US SIM: VOLmax=0.
LTE L Module e EC25-AUser Manua al open. RTS DTR TXD RXD 65 VILmin=-0.3 3V VILmax=0.6V VIHmin=1.2V V VIHmax=2.0 0V 1.8V powe er domain. If unused, keep it open. Data termin nal ready,sleep mode control. VILmin=-0.3 3V VILmax=0.6V VIHmin=1.2V V VIHmax=2.0 0V 1.8V powe er domain. Pull-up by default. Low level wakes w up the module e. If unused, keep it open. Transmit da ata. VOLmax=0.4 45V VOHmin=1.3 35V 1.8V powe er domain. If unused, keep it open. DI Receive datta. VILmin=-0.3 3V VILmax=0.
LTE L Module e EC25-AUser Manua al PCM_IN PCM_OUT T PCM_SYN NC 24 DI 25 DO 26 IO PCM data in nput. VILmin=-0.3 3V VILmax=0.6V VIHmin=1.2V V VIHmax=2.0 0V 1.8V powe er domain. If unused, keep it open. PCM data output. o VOLmax=0.4 45V VOHmin=1.3 35V 1.8V powe er domain. If unused, keep it open. PCM data frrame sync signal.. VOLmax=0.4 45V VOHmin=1.3 35V VILmin=-0.3 3V VILmax=0.6V VIHmin=1.2V V VIHmax=2.0 0V 1.8V powe er domain. In master mode, it is s In an output signal.
LTE L Module e EC25-AUser Manua al WAKEUP_ _IN W_DISABL LE# AP_READ DY 1 Sleep mode e control. VILmin=-0.3 3V VILmax=0.6V VIHmin=1.2V V VIHmax=2.0 0V 1.8V powe er domain. Pull-up by default. Low level wakes w up the module e. If unused, ke eep it open. DI Airplane mo ode control. VILmin=-0.3 3V VILmax=0.6V VIHmin=1.2V V VIHmax=2.0 0V 1.8V powe er domain. Pull-up by default. In low volta age level, module ca an enter into airplane mode. m If unused, ke eep it open.
LTE L Module e EC25-AUser Manua al Sleep Mode e c consumption of the t module will w be reducced to the minimal m level. In this mode, the current During this mode, the module e can still receive r pagiing messag ge, SMS, vo oice call and d TCP/UDP data from the netwo ork normally y. Power Dow wn Mode In this mode, the power p mana agement unit shuts down the powerr supply. Software is no ot active. The serial interface i is not n accessib ble.
LTE L Module e EC25-AUser Manua al Refer to o AT comma and AT+QCF FG=“apread dy” for deta ails. B Applicatio on with USB B Remote Wakeup W Fun nction 3.5.1.2. USB If host supp ports USB su uspend/resu ume and rem mote wakeup p function, th he following part will sho ow the sleep p application. There are th hreeprecond ditions tolet the t module enter into th he sleep mode. and AT+QSC CLK=1 to enable the sle eep mode. Execute AT comma e the DTR is held in high h level or kee ep it open.
LTE L Module e EC25-AUser Manua al state. The followin ng figure sho ows the connection betw ween the mo odule and th he host. Module Host VDD D USB_V VBUS USB B_DP USB B_DP USB B_DM USB B_DM AP_RE EADY GPIO O RI EINT T G GND GND D F Figure 5: Sleep Applica ation with RI R Sending data to EC C25through USB will wa ake up the module. m When EC25has E UR RC to reportt, RI signal will w wake up the host. B Applicatio on without USB Suspe end Functio on 3.5.1.4.
LTE L Module e EC25-AUser Manua al Opening po ower switch to t supply po ower to USB B_VBUS will wake up the e module. NOTE You should pay attentiion to the le evel match shown in dotted d line between b mo odule and host.Refer h to o document [1] [ for more e details abo out EC25 pow wer manage ement appliccation. 3.5.2. Airplane Mo ode When the module m ente ers into airp plane mode e, the RF fu unction doess not work, and all AT T commandss correlative with w RF funcction will be inaccessible e.
LTE L Module e EC25-AUser Manua al Table 6: VB BAT and GN ND Pins Pin Name Pin No o. Description n Min. Typ p. Max. Unit VBAT_RF 57,58 Power supp ply for module RF part. 3 3.3 3.8 4.3 V VBAT_BB 59,60 Power supp ply for module baseband part. p 3 3.3 3.8 4.3 V GND 8,9,19,,22, 36,46, 48,50~ ~54,56, 72, 85~ ~112 Ground. - 0 - V 3.6.2. De ecrease Vo oltage Dro op The power supply rang ge of the mo odule is from m 3.3Vto4.3 3V. Make sure the inputt voltage will never drop p below 3.
LTE L Module e EC25-AUser Manua al VBAT VB BAT _RF VB BAT_BB + D1 C1 5.1 1V 100uF + C2 C3 100nF C4 33 3pF 10pF C5 1 uF 100 C6 C7 C8 33pF 10pF 10 00nF Modu ule Figure e 8: Star Structure of the t Power Supply S 3.6.3. Re eference Design D forr Power Su upply The power design d for th he module iss very imporrtant, asthe performance of the mod dule largely depends on n the power source. s The e power sup pply is capable of providing sufficie ent current u up to 2A at least.
LTE L Module e EC25-AUser Manua al 3.6.4. Mo onitor the Power Su upply You can usse the AT+C CBC comma and to monitor the VBA AT_BB volta age value. F For more de etails, please e refer to doc cument [2]. 3.7. Turn n on and d off Scen narios 3.7.1. Tu urn on Mod dule Using g the PWR RKEY The followin ng table shows the pin definition d of PWRKEY. WRKEY Pin n Descriptio on Table 7: PW Pin Name PWRKEY Pin No. 21 Description DC Characteris C tics Turn on/o off the modu ule. VIHmax=2.1V VIHmin=1.
LTE L Module e EC25-AUser Manua al S1 PWRKEY Y TVS Close to S1 Figure 11: Turn on n the Modulle Using Ke eystroke The turn on scenario is illustrated in n the following figure. NOTE E VBAT ≥ 100m ms VIH ≥ 1 .3V KEY PWRK VIL ≤ 0.5 5V RESET T_N TBD STAT US (OD) TB BD UART Inactiv ve A Active TB BD USB Inactiv ve A Active Figure 12: Tim ming of Turn ning on Mod dule NOTE Make sure that t VBAT iss stable befo ore pulling down d PWRK KEY pin. The e time betwe een them is no less than n 30ms.
LTE L Module e EC25-AUser Manua al 3.7.2. Tu urn off Mod dule The followin ng procedure es can be ussed to turn off o the modu ule: Normall power dow wn procedure e: Turn off th he module using u the PW WRKEY pin. Normall power dow wn procedure e: Turn off th he module using u comma and AT+QPO OWD. e PWRKEY Y Pin 3.7.2.1.
LTE L Module e EC25-AUser Manua al Table 8: RE ESET_N Pin n Descriptio on Pin Name RESET_N Pin No o. 20 Descrription DC Characteris C tics Reset the module e. VIHmax=2.1V VIHmin=1.3V VILma ax=0.5V Co omment The recomm mended circcuit is similar to the PW WRKEY contrrol circuit. You Y can use an open drrain/collector driver or buttton to contrrol the RESE ET_N. RESET_N TBD 4.
LTE L Module e EC25-AUser Manua al VBAT T ≤Treset_max x ≥T Treset_min VIH ≥ 1.3V RESE ET _N VIL ≤ 0 .5V Module Status s RU UNNING R RESETTING RUNNING Fig gure 16: Tim ming of Res setting Mod dule NOTES 1. 2. Use th he RESET_N only whe en turning off the mod dule by the e command AT+QPOW WD and the e PWRKE EY pin failed d. Ensure e that there iss no large capacitance on the PWR RKEY and RESET_N R pin ns. 3.9.
LTE L Module e EC25-AUser Manua al EC25 suppo orts USIM card c hot-plug via the US SIM_PRESE ENCE pin. It supports llow level an nd high leve el detections, whichisdisa abled by default. d Forr details, re efer to doc cument [2]] about the e command d AT+QSIMDET. The followin ng figure sho ows the refe erence desig gn of the 8-p pin USIM con nnector.
LTE L Module e EC25-AUser Manua al criteria belo ow in the US SIM circuit de esign: Keep la ayout of USIIM card as close c as posssible to the module. Asssure the len ngth of trace e is less than n 200mm m. Keep USIM U card siignal away from f RF and d VBAT align nment. Assure the ground between th he module and a the USIM M connector short and wide. Keep the width of o ground and USIM_ _VDD no lesss than 0.5m mm to mainta ain the same e electric po otential.
LTE L Module e EC25-AUser Manua al Test Poin nts Minimize this stub M Module VDD R3 NM_0R R4 NM_0R MCU ESD Arrayy USB_VBUS USB_DM USB_DP GND R1 0R USB_DM R2 0R USB_DP Close to Module M GND Figure 19: 1 Referen nce Circuit of o USB App plication In order to meet m USB data d line signal integrityy, componen nts R1, R2, R3 R and R4 m must be placed close to o the module,, and then th hese resisto ors should be e placed clo ose to each other.
LTE L Module e EC25-AUser Manua al 3.11. UA ART Interrface The module e provides two UART interfaces: main UAR RT interface and debug g UART intterface. The e following sh hows the diffferent featurres. Main UART U interfa ace supportss 9600, 192 200, 38400, 57600, 115 5200, 23040 00, 460800,, 921600bpss baud ra ate, and the e default is 115200bps. This interfa ace can be used for da ata transmiss sion and AT T commu unication. Debug UART inte erface suppo orts 115200 0bpsbaud ra ate.
LTE L Module e EC25-AUser Manua al Table 13:Lo ogic Levels s of Digital I/O I Parameterr Min n. Max. Unit VIL -0.3 3 0.6 V VIH 1.2 2 2.0 V VOL 0 0.45 V VOH 1.3 35 1.8 V The module e provides 1.8V UART T interface. A level translator sho ould be used if your application iss equipped with a 3.3V UART interfacce. A level trranslator TX XS0108EPW WR provided by Texas In nstrument iss ded. The following figure e shows the reference design. d recommend VDD_EXT VCCA VCCB V 0.
LTE L Module e EC25-AUser Manua al VDD_EXT 4.7K VDD_EXT 1nF MCU/A ARM 10K Mo odule RXD /TXD /RXD TXD 10K VCC_MCU 1nF 4.7K V VDD_EXT /RTS /CTS GPIO EINT GPIO GND RTS CTS DTR RI DCD GND Figure 21 1: Reference Circuit wiith Transisttor Circuit NOTE Transistor circuit c solutio on is not suittable for high baud rates exceeding g 460Kbps. 3.12.
LTE L Module e EC25-AUser Manua al 125us P CM M_CLK 1 2 255 256 P CM M_S Y NC MS B LS B MS B MS B LS B MS B P CM M_OUT P C M_IN Figure 22: Primary Mo ode Timing g 125us P CM_ _CLK 1 2 15 1 16 P CM_ S Y NC MS B L B LS MS B L B LS _OUT P CM_ P CM_ _IN Figure 23: Auxiliary A Mode M Timing g ng table sho ows the pin definition of o PCM and d I2C interfa ace which can be applied on audio o The followin codec desig gn.
LTE L Module e EC25-AUser Manua al PCM_OUT T 25 DO PCM data output 1.8V powe er domain PCM_SYN NC 26 IO PCM data frame sy ync signal 1.8V powe er domain PCM_CLK K 27 IO PCM data bit clock k 1.8V powe er domain I2C_SCL 41 OD I2C serrial clock Require e external pull--up to 1.8V I2C_SDA 42 OD I2C serrial data Require e external pull--up to 1.
LTE L Module e EC25-AUser Manua al 3.13. AD DC Functtion e provides tw wo analog-to o-digital converters (ADC). Using AT T command d AT+QADC C=0 can read d The module the voltage value on AD DC0 pin. Us sing AT com mmand AT+QADC=1 ca an read the voltage valu ue on ADC1 1 pin. For more details off these AT co ommands, please p refer todocumen nt [2]. In order to improve the accuracy off ADC, the trrace of ADC C should be surrounded by ground. Table 15: Pin P Definitio on of the AD DC Pin Name Pin No.
LTE L Module e EC25-AUser Manua al registra ationmode. NET_STAT TUS 6 DO Indicate e the module network activity status. 1.
LTE L Module e EC25-AUser Manua al Table 19: Pin P Definitio on of STATU US Pin Name STATUS Pin No. 61 I/O Description n Comment OD Indicate the e module ope eration statu us Requ uire external pull-up The followin ng figure sh hows different design ciircuitof STA ATUS, you can c choose either one according a to o your applica ation deman nds. VB BAT VDD_MCU 10K 2.2K STATUS Module M MCU_GPIO STATUS Module e Figurre 26: Referrence Circuit of the ST TATUS 3.16.
LTE L Module e EC25-AUser Manua al Table 20: Behavior B of the RI State R Response Idle R keeps hig RI gh level URC R outputs 120ms low pulse when new RI n URC retturns havior can be changed d by command AT+QC CFG=“urc/rri/ring”.Refe er to docum ment [2] for The RI beh details.
LTE L Module e EC25-AUser Manua al 4 G S Receiverr GNSS 4.1. Gen neral Des scription des a fully integrated i g global naviga ation satellitte system solution s thatt supports Gen8C-Liteo G of EC25 includ Qualcomm (GPS, GLONASS, BeiD Dou, Galileo and QZSS)). orts standarrd NMEA-0183 protocol, and outputts NMEA sentences with h 1Hz via USB interface e EC25 suppo by default. SS engine is s switched off. o It has to o be switche ed on with A AT comman nd.
LTE L Module e EC25-AUser Manua al Ho ot start @ @open sky Accuracy (GNSS) CE EP-50 Autonomou us TBD s XTRA enab bled TBD s Autonomou us @open sky y TBD m NOTES 1. 2. 3. Trackin ng sensitivity y: the lowestt GPS signa al value at th he antenna port for whicch the modu ule can keep p on posiitioning for 3 minutes. Reacqu uisition sens sitivity: the lo owest GPS signal value e at the ante enna port fo or which the module can n fix position again within w 3 minu utes after los ss of lock.
LTE L Module e EC25-AUser Manua al 5 A Anten nna In nterfa ace EC25 anten nna interface e includes a main anten nna,anRx-div versity anten nna which iss used tores sist the fall of o signals cau used by high speed movement an nd multipath h effect, and a GNSS antenna. The T antenna a interface ha as an impeda ance of 50ohm. 5.1. Main n/Rx-diversityAn ntenna In nterface 5.1.1. Pin Definitio on The main an ntenna and Rx-diversity yantenna pin ns definition are shown below.
LTE L Module e EC25-AUser Manua al 5.1.3. Re eference Design D The referen nce design of o ANT_MAIN N and ANT_ _DIVantenna a is shown as a below. It should reserve a π-type e matching circuit for bettter RF perfo ormance. The capacitors s are not mo ounted by de efault. Main antenna Modu ule R1 0R AN NT_MAIN C1 C2 NM NM Diversity antenna R2 0R A ANT_DIV C3 C4 NM NM Figure 27: 2 Referenc ce Circuit of o Antenna Interface NOTES 1.
LTE L Module e EC25-AUser Manua al Table 24: Pin P Definitio on of GNSS S Antenna Pin Name Pin No. I/O O De escription Com mment ANT_GNS SS 47 7 A AI GN NSS antenna 50o ohmimpedan nce Table 25: GNSS G Frequ uency Type Frequency Unit GPS/Galile eo/QZSS 15 575.42±1.02 23 MHz GLONASS S 15 597.5~1605 5.8 MHz BeiDou 15 561.098 ± 2.046 2 MHz nce design of o GNSS anttenna is shown as below w. The referen VDD GNSS Antenna 10R 0.
LTE L Module e EC25-AUser Manua al 5.3. Ante enna Ins stallation n 5.3.1. An ntenna Re equiremen nt The followin ng table shows the requirements on n main anten nna, Rx-dive ersity antenn na and GNS SS antenna. Table 26: Antenna A listt Type Requirem ments GNSS Frequency y range: 156 61 - 1615MH Hz Polarizatio on: RHCP orr linear VSWR: < 2 (Typ.) ntenna gain: > 0dBi Passive an Active antenna noise figure: < 1.5 5dB Active antenna gain: > -2dBi dded LNA ga ain: 20dB (T Typ.
LTE L Module e EC25-AUser Manua al Figure 29: Dime ensions of the t UF.L-R--SMT Conne ector (Unit:: mm) e U.FL-LP serial connec ctor listed in the followin ng figure to match m the UF.L-R-SMT. You can use Figure 30:Mechan nicals of UF F.
LTE L Module e EC25-AUser Manua al The followin ng figure des scribes the space s factorr of mated connector. Figure 31:S Space Facto or of Mated d Connectorr (Unit: mm m) For more de etails, please visit http:///www.hirose e.com.
LTE L Module e EC25-AUser Manua al 6 Electrrical, Relia E ability y and d R oCharracterristics Radio 6.1. Abs solute Ma aximum Ratings Absolute maximum ratings for pow wer supply and a voltage e on digital and a analog pins of the module are e listed in the following ta able. Table 27: Absolute A Ma aximum Ratings Parameter Min. M Max. Unit VBAT_RF/V VBAT_BB -0.3 4 4.7 V USB_VBUS S -0.3 5 5.5 V Peak Current of VBAT_ _BB 0 0 0.8 A Peak Current of VBAT_ _RF 0 1.
LTE L Module e EC25-AUser Manua al Parameter Descrip ption Conditio ons M Min. VBAT_R RF min/max x values, inclluding voltage drop, d ripple and a spikes. Voltage drop during transmitting burst Maximum m power con ntrol level on GSM900. IVBAT Peak supply currentt (during transmis ssionslot) m power con ntrol Maximum level on GSM900. USB_VBUS S USB dettection Typ p. 3 3.0 Max. Unit 400 mV 1.8 2.0 A 5.0 5.25 V 6.3.
LTE L Module e EC25-AUser Manua al Table 30: Conducted C R Output Power RF Frequency Max. Min. WCDMA B2 2/B4/B5 24dBm+1/--3dB <-50dBm LTE FDD B2/B4/B12 23dBm±2d dB <-44dBm 6.6. RF Receivin R ng Sensittivity ation will be added in future version n of this docu ument. This informa 6.7. Elec ctrostatic c Discha arge e is not prote ected agains st electrosta atics discharg ge (ESD) in general.
LTE L Module e EC25-AUser Manua al 7 M Mecha anica al Dim mensiions This chapte er describes the mechan nical dimens sions of the module.All m d dimensions a are measure ed in mm. 7.1. Mec chanical Dimensiions of th he Modu ule 2.4+/-0.2 (29+/-0.15) ( (32+/-0.15 5) 0.
LTE L Module e EC25-AUser Manua al 29.0 32.
LTE L Module e EC25-AUser Manua al 29.0 7.2. Foo otprint off Recomm mendatio on Keepout arrea 32.00 Figure 34: Recommended Fo ootprint (To op View) NOTES 1. 2. Pads 73~84 should d not be des signed. In orde er to maintain the modu ule, keep ab bout 3mm between b the e module an nd other com mponents in n thehostt PCB.
LTE L Module e EC25-AUser Manua al 7.3. Top View of the Mod dule F Figure 35: Top T View off the Module 7.4.
LTE L Module e EC25-AUser Manua al 8 S Storag ge an nd Ma anufa acturing 8.1. Storrage uum-sealed bag. The re estrictions off storage con ndition areshown as below. EC25 is stored in avacu e in sealed bag b is 12 mo onths at < 40ºC/90%RH 4 H. 1. Shelf life s orr other high temperature e 2. After thiis bag is opened, devices that will be subjected to reflow soldering process ses must be:: Mo ounted within 72 hours at a factory co onditions of ≤ 30ºC/60%RH. Sto ored at <10% % RH. 3.
LTE L Module e EC25-AUser Manua al suggested that t the mo odule should d be mounte ed after the e first panel has been reflowed. The T following g picture is the actual diagram which we have op perated. ºC Preheat H Heating Cooling 250 Liquids s Temperatu ure 217 200 0 ºC 00 20 4 40s~60s Temperature 160 ºC 150 70s~120s 100 Betwee en 1~3 ºC /s 50 0 50 100 1 150 2 200 250 30 00 s Tim me Figure 37: Liquids Te emperature 8.3. Packaging ckaged in ta ap andreel carriers.
1 0. 29 3± 0.15 29.3 0 15 0.35 5± 0.05 30.3± 0.15 ± 50 1. 44.00± 0.3 20.20± 0.15 44.00± 0.1 0 2.0 00± 0.1 4.00± 0.1 30.3± 0.15 1.75± 0.1 LTE L Module e EC25-AUser Manua al 4.2± 0.15 3.1± 0.15 32.5± 0.15 33.5± 0.15 32.5± 0.15 33.5± 0.15 e p a t r e v o C 48.5 13 100 d e e f f o n o i t c e r i D 44.5+0.20 -0.
LTE L Module e EC25-AUser Manua al 9 A Appen ndix A Refferen nce Table 32: Related R Doc cuments SN D Document N Name Rema ark [1] Quectel_EC2 Q 25_Power_M Managemen nt_Applicatio on_ N Note EC25 Power Man nagement Ap pplication Note [2] Q Quectel_EC2 25_AT_Com mmands_Manual EC25 AT Comma ands Manuall [3] Q Quectel_EC2 25_GNSS_A AT_Comman nds_Manuall EC25 GNSS AT C Commands Manual [4] Q Quectel_Mod dule_Second dary_SMT_User_Guide e Module Secondarry SMT User Guide Table 33: Terms T and Abb
LTE L Module e EC25-AUser Manua al EFR Enhan nced Full Ra ate ESD Electro ostatic Disch harge FDD Freque ency Divisio on Duplex FR Full Ra ate GLONASS S GLObalnayaNAvig gatsionnaya aSputnikovaya Sistema,, the Russian Global Naviga ation Satellitte System GMSK Gauss sian Minimum Shift Keyiing GNSS Global Navigation n Satellite Sy ystem GPS Global Positioning g System GSM Global System forr Mobile Com mmunication ns HR Half Rate R HSPA High Speed S Packe et Access HSDPA High Speed S Do
LTE L Module e EC25-AUser Manua al PPP Point-tto-Point Pro otocol QAM Quadrrature Amplitude Modula ation QPSK Quadrrature Phase e Shift Keyin ng RF Radio Frequency RHCP Right Hand Circularly Polarize ed Rx Receiv ve SIM Subsc criber Identiffication Module SMS Short Message Se ervice TDD Time Division D Dup plexing TDMA Time Division D Multiple Access s TD-SCDMA Time Division-Syn D nchronous Code C Division Multiple A Access TX Transm mitting Direc ction UL Uplink k UMTS Univerrsa
LTE L Module e EC25-AUser Manua al VOHmax Maxim mum Output High Level Voltage V Valu ue VOHmin Minimum Output High H Level Voltage V Valu ue VOLmax Maxim mum Output Low Level Voltage V Valu ue VOLmin Minimum Output Low L Level Voltage V Value e VSWR Voltag ge Standing Wave Ratio o WCDMA Wideb band Code Division D Multtiple Access s EC25-A_Us E ser_ManualC Confidentia al / Released 66 / 6 69
LTE L Module e EC25-AUser Manua al 10 0 Apppendixx B GPRS G S Cod ding S Schem me Table 34: Description D of Different Coding Sc chemes Scheme CS S-1 CS-2 CS-3 CS-4 C Code Rate 1/2 2 2/3 3/4 1 USF 3 3 3 3 Pre-coded USF 3 6 6 12 Radio Bloc ck excl.USF F and BCS 181 1 268 312 428 BCS 40 16 16 16 Tail 4 4 4 - Coded Bits s 456 6 588 676 456 Punctured Bits 0 132 220 - Data Rate Kb/s K 9.0 05 13.4 15.6 21.
LTE L Module e EC25-AUser Manua al 11 Apppendixx C GPRS G S Multti-slot Clas ss Twenty-nine e classes of o GPRS mu ulti-slot mod des are deffined for MS S in GPRS specificatio on. Multi-slo ot classes are product dep pendant, and determine e the maximu um achievab ble data rate es in both th he uplink and d downlink dirrections. Wrritten as 3+1 1 or 2+2, the first numb ber indicates s the amoun nt of downlin nk timeslots s, while the se econd numb ber indicates s the amount of uplink timeslots.
LTE Mo odule Sires s E EC25Hardw ware Design n 12 Apppendixx D EDGE E E Mod dulationan nd Cod ding Schem S me Table 36: EDGE E Modu ulation and Coding Sch heme Coding Sch heme Mod dulation Coding Family 1 Timeslot 2 Tim meslot 4 Timeslot CS-1: GMSK / 9.05kbps 9 18.1kkbps 36.2kbps CS-2: GMSK / 13.4kbps 26.8kkbps 53.6kbps CS-3: GMSK / 15.6kbps 31.2kkbps 62.4kbps CS-4: GMSK / 21.4kbps 2 42.8kkbps 85.6kbps MCS-1 GMSK C 8.80kbps 8 17.60 0kbps 35.20kbps MCS-2 GMSK B 11.
