ON 8 BGA7130 HV S 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Rev. 1 — 9 October 2012 Product data sheet 1. General description The MMIC is a single-stage amplifier, offered in a leadless surface-mount package. It delivers 30 dBm output power at 1 dB gain compression and a superior performance up to 2700 MHz. Its power saving features include simple quiescent current adjustment and logic-level shutdown control to reduce the supply current to 4 A. 2.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Table 1. Quick reference data …continued 4.75 V VSUP 5.25 V; 40 C Tcase +85 C; Pi < 20 dBm; R3 = 523 (tolerance 1 %); input and output impedances matched to 50 (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BGA7130 HVSON8 plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 3 0.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 8. Pinning information 8.1 Pinning WHUPLQDO LQGH[ DUHD Q F 5)B287 ,&4B$'- 5)B,1 %*$ 5)B287 (1$%/( Q F 9&& DDD 7UDQVSDUHQW WRS YLHZ Fig 2. Pin configuration 8.2 Pin description BGA7130 Product data sheet Table 4. Pin description Symbol Pin Description n.c.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 9. Functional description 9.1 Supply current adjustment The supply current can be adjusted by changing the value of biasing resistor R3 which connects pin ICQ_ADJ (pin 8) to ground (see Figure 1). DDD ,&& WRW P$ 5 ȍ VSUP = 5 V; Tamb = 25 C. Fig 3. Supply current ICC(tot) as function of biasing resistor R3; typical values 9.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 13. Dynamic characteristics Table 9. Dynamic characteristics 4.75 V VSUP 5.25 V; 40 C Tcase 85 C; Pi < 20 dBm; R3 = 523 (tolerance 1 %); input and output impedances matched to 50 (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Table 9. Dynamic characteristics …continued 4.75 V VSUP 5.25 V; 40 C Tcase 85 C; Pi < 20 dBm; R3 = 523 (tolerance 1 %); input and output impedances matched to 50 (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier The LTE 750 MHz circuit described here is matched for the downlink frequency range of band 12, 13, 14 and 17 as defined in the evolved UMTS Terrestrial Radio Access Network (eUTRAN) air interface of Long Term Evolution (LTE) mobile networks. These bands are used in the United States and are expected to be used in Canada in the future. Band 12, 13 and 14 are commonly referred to as SMH bands. Table 10.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier ,& (1$%/( 9&& 5 & & 9 , &219(57(5 %$1'*$3 / & ; 06/ & 06/ 06/ 9683 & 5 5)B287 5)B,1 5 / 06/ 06/ & 06/ 06/ ; ,&4B$'- & *1' & 5 DDD See Table 12 for list of components. Fig 5.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier WKURXJK YLD 5) DQG DQDORJ URXWLQJ P &X P $X PP 52 & 5) DQG DQDORJ JURXQG P &X PP SUHSHJ DQDORJ URXWLQJ P &X PP )5 5) DQG DQDORJ JURXQG P &X P $X DDD *1' *1' 9FF 9VHQVH (QDEOH Printed-Circuit Board (PCB) stack build *1' Fig 7. - 5 & 5 & & - - / 06/ 3 210 / 06/ & & 06/ 5 06/ & .
BGA7130 NXP Semiconductors *1' *1' 9FF 9VHQVH (QDEOH *1' 400 MHz to 2700 MHz 1 W high linearity silicon amplifier - 5 & 5 & & - - / 06/ 3 210 / & 06/ 06/ & & . - , +*) ('&% $ & 06/ 06/ & 5)LQ 5)RXW 5 1;3 6(0,&21'8&7256 %*$ 627 5HY Fig 9. Top view of populated LTE-2140 Printed-Circuit Board (PCB) Table 12. List of components See Figure 5 for schematics.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Table 12. List of components …continued See Figure 5 for schematics. Component Description Value Remarks LTE-750 UMTS-2140 0 R4 resistor 0 L1 RF choke 68 nH 18 nH L2 inductor 1.5 nH - X1, X2 SMA connector - - [1] length (L) is specified, width (W) = 1.14 mm and spacing (S) = 0.8 mm. 14.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier _V _ G% DDD _V _ G% DDD I *+] VSUP = 5 V; ICC(tot) = 450 mA; matched for LTE-750. (1) Tamb = 40 C (2) Tamb = +25 C (2) Tamb = +25 C (3) Tamb = +85 C (3) Tamb = +85 C ,3 2 G%P ,3 2 G%P I *+] Fig 13.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier ,3 2 G%P DDD ,3 2 G%P DDD 3/ G%P SHU WRQH VSUP = 5 V; ICC(tot) = 450 mA; f = 748 MHz; f = 1 MHz; matched for LTE-750. 3/ G%P SHU WRQH Tamb = 25 C; ICC(tot) = 450 mA; f = 748 MHz; f = 1 MHz; matched for LTE-750. (1) Tamb = 40 C (1) VSUP = 4.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 1) G% DDD 1) G% DDD I *+] (1) VSUP = 4.75 V (2) Tamb = +25 C (2) VSUP = 5 V (3) Tamb = +85 C (3) VSUP = 5.25 V 9, GLJ 9 DDD W ȝV Fig 22.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier DDD *S ,6/ G% DDD _V _V _ _V _ G% I *+] VSUP = 5 V; ICC(tot) = 450 mA; pin ENABLE = LOW; matched for LTE-750. I *+] VSUP = 5 V; ICC(tot) = 450 mA; pin ENABLE = LOW; matched for LTE-750. (1) Gp (1) s112 (2) ISL (2) s222 Fig 24.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier _V _ G% DDD _V _ G% DDD I *+] VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140. (1) Tamb = 40 C (2) Tamb = +25 C (2) Tamb = +25 C (3) Tamb = +85 C (3) Tamb = +85 C ,3 2 G%P ,3 2 G%P I *+] Fig 29.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier ,3 2 G%P DDD ,3 2 G%P DDD 3/ G%P SHU WRQH VSUP = 5 V; ICC(tot) = 450 mA; f = 1 MHz; matched for UMTS-2140. (1) VSUP = 4.75 V (2) Tamb = +25 C (2) VSUP = 5 V (3) Tamb = +85 C (3) VSUP = 5.25 V DDD 3/ G% G% Tamb = 25 C; ICC(tot) = 450 mA; f = 1 MHz; matched for UMTS-2140.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 1) G% DDD 1) G% DDD I *+] I *+] Tamb = 25 C; ICC(tot) = 450 mA; matched for UMTS-2140. VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140. (1) Tamb = 40 C (2) Tamb = +25 C (1) VSUP = 4.75 V (3) Tamb = +85 C (2) VSUP = 5 V (3) VSUP = 5.25 V Fig 36.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier DDD *S ,6/ G% DDD _V _V _ _V _ G% I *+] VSUP = 5 V; ICC(tot) = 450 mA; pin ENABLE = LOW; matched for UMTS-2140. (1) s112 (2) ISL (2) s222 BGA7130 Product data sheet I *+] VSUP = 5 V; ICC(tot) = 450 mA; pin ENABLE = LOW; matched for UMTS-2140. (1) Gp Fig 40.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 15. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm SOT908-3 X A B D A E A1 c detail X terminal 1 index area e1 terminal 1 index area e C 1 C A B v w b 4 y1 C y L k Eh 8 5 Dh 0 1 Dimensions (mm are the original dimensions) Unit mm A(1) A1 b max 1.00 0.05 0.30 nom 0.85 0.03 0.25 min 0.80 0.00 0.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 16. Soldering )RRWSULQW LQIRUPDWLRQ IRU UHIORZ VROGHULQJ RI +9621 SDFNDJH 627 *[ 3 ' & Q63[ +\ 63\ *\ 6/\ %\ $\ Q63\ 63[ 6/[ VROGHU ODQG VROGHU SDVWH GHSRVLW VROGHU ODQG SOXV VROGHU SDVWH RFFXSLHG DUHD ',0(16,216 LQ PP 3 $\ %\ & ' 6/[ 6/\ 63[ 63\ *[ *\ +\ Q63[ Q63\ ,VVXH GDWH VRW BIU Fig 4
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 17. Abbreviations Table 13.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 19. Legal information 19.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier 21. Contents 1 2 3 4 5 6 7 8 8.1 8.2 9 9.1 9.2 10 11 12 13 14 14.1 14.2 14.3 15 16 17 18 19 19.1 19.2 19.3 19.4 20 21 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 1 Design support . . . . . . . . . . . . .