DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PRF947 UHF wideband transistor Product specification Supersedes data of 1999 Mar 01 1999 Jul 23
Philips Semiconductors Product specification UHF wideband transistor PRF947 FEATURES PINNING • Small size PIN • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector DESCRIPTION • Gold metallization ensures excellent reliability. APPLICATIONS 3 handbook, halfpage • Communication and instrumentation systems. 3 1 DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package.
Philips Semiconductors Product specification UHF wideband transistor PRF947 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 1.
Philips Semiconductors Product specification UHF wideband transistor PRF947 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V(BR)CBO collector-base breakdown voltage IC = 100 µA; IE = 0 20 − − V V(BR)CEO collector-emitter breakdown voltage IC = 100 µA; IB = 0 10 − − V V(BR)EBO emitter-base breakdown voltage IE = 10 µA; IC = 0 1.
Philips Semiconductors Product specification UHF wideband transistor PRF947 MGS496 MGS497 120 400 handbook, halfpage handbook, halfpage Ptot (mW) hFE 300 80 200 40 100 0 0 0 50 100 150 Ts (°C) 0 200 10 20 30 40 50 IC (mA) VCE = 6 V. Fig.2 Power derating as a function of soldering point temperature. Fig.3 DC current gain as a function of collector current; typical values. MGS498 MGS499 0.5 10 handbook, halfpage handbook, halfpage Cre fT (GHz) (pF) 0.4 8 0.3 6 0.
Philips Semiconductors Product specification UHF wideband transistor PRF947 MGS500 gain (dB) handbook, halfpage MSG gain (dB) Gmax 40 16 MGS501 50 20 handbook, halfpage GUM 12 30 8 20 4 10 GUM MSG Gmax 0 102 0 0 10 20 30 I C (mA) 40 103 f = 1 GHz; VCE = 6 V. IC = 5 mA; VCE = 6 V. Fig.6 Fig.7 Gain as a function of collector current; typical values. MGR502 50 f (MHz) 104 Gain as a function of frequency; typical values.
Philips Semiconductors Product specification UHF wideband transistor PRF947 MGS504 4 MGS505 4 handbook, halfpage handbook, halfpage NF (dB) NF (dB) (1) 3 3 (2) (1) 2 (2) (3) 2 (3) 1 0 10−1 VCE = 6 V. (1) f = 2 GHz (2) f = 1.5 GHz (3) f = 1 GHz (4) (5) (6) 1 1 10 IC (mA) 0 102 102 f (MHz) 104 VCE = 6 V. (1) IC = 30 mA (2) IC = 15 mA (3) IC = 5 mA. (4) f = 900 MHz (5) f = 800 MHz (6) f = 500 MHz. Fig.10 Minimum noise figure as a function of collector current; typical values.
Philips Semiconductors Product specification UHF wideband transistor handbook, full pagewidth PRF947 unstable region source unstable region load 90° 1.0 +1 135° 45° +2 +0.5 0.8 0.6 +0.2 0.4 +5 Γopt 0.2 (1) 180° 0.5 0 1 2 (4) 0° (2) (6) −0.2 −5 −0.5 −135° 0 (5) (3) f = 1 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω. (1) G = 17 dB (2) G = 16 dB (3) G = 15 dB (4) NF = 1.6 dB (5) NF = 1.8 dB (6) NF = 2 dB. 5 −2 − 45° −1 1.0 − 90° MGS506 Fig.
Philips Semiconductors Product specification UHF wideband transistor PRF947 APPLICATION INFORMATION SEQUENCE No. SPICE parameters for the PRF947 die. SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 39(2) 1999 Jul 23 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC Cbpb VALUE 0.466 150.4 1.000 53.06 180.0 57.30 2.
Philips Semiconductors Product specification UHF wideband transistor PRF947 90° handbook, full pagewidth 1.0 +1 135° 45° +2 +0.5 0.8 0.6 +0.2 0.4 +5 0.2 3 GHz 180° 0.2 0 0.5 1 2 GHz 2 5 0° 0 1 GHz 100 MHz 500 MHz −0.2 −5 200 MHz −135° −0.5 −2 − 45° −1 1.0 − 90° MGS508 VCE = 6 V; IC = 15 mA; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (s11); typical values.
Philips Semiconductors Product specification UHF wideband transistor PRF947 90° handbook, full pagewidth 135° 45° 3 GHz 2 GHz 180° 0.5 0.4 0.3 0.2 1 GHz 500 MHz 200 MHz 100 MHz 0.1 0° −135° − 45° − 90° MGS510 VCE = 6 V; IC = 15 mA. Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.5 1 5 0° 0 1 GHz 500 MHz 2 GHz 100 MHz 3 GHz 200 MHz − 5 −0.
Philips Semiconductors Product specification UHF wideband transistor PRF947 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.
Philips Semiconductors Product specification UHF wideband transistor PRF947 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification UHF wideband transistor PRF947 NOTES 1999 Jul 23 14
Philips Semiconductors Product specification UHF wideband transistor PRF947 NOTES 1999 Jul 23 15
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