Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsBJTs & IGBTsTransistor

1. Product proﬁle

1.1 General description

PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic

packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated

internally.

1.2 Features

n Current gain matching

n Base-emitter voltage matching

n Common emitter conﬁguration for SOT353 types

n Application-optimized pinout

1.3 Applications

n Current mirror

n Differential ampliﬁer

1.4 Quick reference data

PMP5501V; PMP5501G;

PMP5501Y

PNP/PNP matched double transistors

Rev. 03 — 28 August 2009 Product data sheet

Table 1. Product overview

Type number Package PNP/PNP h

FE1

FE2

0.98 complement

NPN/NPN

complement

NXP JEITA

PMP5501V SOT666 - PMP5201V PMP4501V

PMP5501G SOT353 SC-88A PMP5201G PMP4501G

PMP5501Y SOT363 SC-88 PMP5201Y PMP4501Y

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - −45 V

collector current - - −100 mA

DC current gain V

= −5V;

= −2mA

200 290 450

Summary of content (14 pages)

PAGE 1
PMP5501V; PMP5501G; PMP5501Y PNP/PNP matched double transistors Rev. 03 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated internally. Table 1. Product overview Type number Package NXP JEITA PNP/PNP hFE1/hFE2 0.
PAGE 2
PMP5501V; PMP5501G; PMP5501Y NXP Semiconductors PNP/PNP matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions hFE1/hFE2 hFE matching VCE = −5 V; IC = −2 mA VBE1−VBE2 VBE matching VCE = −5 V; IC = −2 mA Min Typ Max [1] 0.95 1 - [2] - - 2 Unit Per device [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. mV 2. Pinning information Table 3.
PAGE 3
PMP5501V; PMP5501G; PMP5501Y NXP Semiconductors PNP/PNP matched double transistors 4. Marking Table 5. Marking codes Type number Marking code[1] PMP5501V ED PMP5501G R4* PMP5501Y S6* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PMP5501V; PMP5501G; PMP5501Y NXP Semiconductors PNP/PNP matched double transistors 6. Thermal characteristics Table 7.
PAGE 5
NXP Semiconductors PMP5501V; PMP5501G; PMP5501Y PNP/PNP matched double transistors Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol VBE Parameter Conditions Min Typ Max Unit VCE = −5 V; IC = −2 mA [2] base-emitter voltage −600 −650 −700 mV VCE = −5 V; IC = −10 mA [2] - - −760 mV Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - - 2.2 pF Ce emitter capacitance VEB = −0.
PAGE 6
PMP5501V; PMP5501G; PMP5501Y NXP Semiconductors PNP/PNP matched double transistors 006aaa540 −0.20 IB (mA) = −2.5 −2.25 −2.0 −1.75 −1.5 −1.25 IC (A) −0.16 −0.12 006aaa541 600 hFE (1) 400 −1.0 (2) −0.75 −0.08 −0.5 200 (3) −0.25 −0.04 0 0 −2 −4 −6 0 −10−2 −8 −10 VCE (V) Tamb = 25 °C −10−1 −1 −10 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Collector current as a function of collector-emitter voltage; typical values 006aaa542 −1.
PAGE 7
PMP5501V; PMP5501G; PMP5501Y NXP Semiconductors PNP/PNP matched double transistors 006aaa544 −1 VBE (V) 006aaa545 103 fT (MHz) −0.8 102 −0.6 −0.4 −10−1 −1 −10 −102 10 −103 −1 IC (mA) VCE = −5 V; Tamb = 25 °C Fig 5. −102 −10 IC (mA) VCE = −5 V; Tamb = 25 °C Base-emitter voltage as a function of collector current; typical values Fig 6.
PAGE 8
PMP5501V; PMP5501G; PMP5501Y NXP Semiconductors PNP/PNP matched double transistors 8. Application information V− VCC OUT2 OUT1 IN1 R1 TR1 IN2 TR2 l out TR1 TR2 V+ 006aaa524 Fig 9. 006aaa526 Current mirror Fig 10. Differential amplifier 9. Package outline 1.7 1.5 6 2.2 1.8 0.6 0.5 5 1.1 0.8 5 4 0.45 0.15 4 0.3 0.1 1.7 1.5 2.2 1.35 2.0 1.15 1.3 1.1 pin 1 index 1 2 1 3 0.18 0.08 0.27 0.17 0.5 3 0.25 0.10 0.3 0.2 0.65 1.
PAGE 9
PMP5501V; PMP5501G; PMP5501Y NXP Semiconductors PNP/PNP matched double transistors 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 10
PMP5501V; PMP5501G; PMP5501Y NXP Semiconductors PNP/PNP matched double transistors 2.65 0.60 (1×) 2.35 0.40 0.90 2.10 solder lands 0.50 (4×) solder paste solder resist 0.50 (4×) occupied area 1.20 2.40 msa366 Dimensions in mm Fig 15. Reflow soldering footprint SOT353 (SC-88A) 4.9 2.25 1.5 solder lands 1 solder resist 0.85 2.5 4.5 occupied area 0.85 Dimensions in mm 1 1.5 preferred transport direction during soldering 1.3 1.3 1.225 1.225 sot353_fw Dimensions in mm Fig 16.
PAGE 11
NXP Semiconductors PMP5501V; PMP5501G; PMP5501Y PNP/PNP matched double transistors 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 17. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 18.
PAGE 12
PMP5501V; PMP5501G; PMP5501Y NXP Semiconductors PNP/PNP matched double transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMP5501V_G_Y_3 20090828 Product data sheet - PMP5501V_G_Y_2 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
PAGE 13
NXP Semiconductors PMP5501V; PMP5501G; PMP5501Y PNP/PNP matched double transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 14
NXP Semiconductors PMP5501V; PMP5501G; PMP5501Y PNP/PNP matched double transistors 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .