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1. Product proﬁle

1.1 General description

NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted

Device (SMD) plastic package.

1.2 Features

n High breakdown voltage

n Two electrically isolated transistors

n Small SMD plastic package

1.3 Applications

n Automotive:

u High- and low-side switches

u Voltage regulators

n Communication: Telecom line interface

n Consumer: CRT TV

n Computing: Monitors

1.4 Quick reference data

PMBTA42DS

NPN/NPN high-voltage double transistors

Rev. 02 — 27 August 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - 300 V

collector current - - 100 mA

peak collector current single pulse;

≤ 1ms

- - 200 mA

Summary of content (10 pages)

PAGE 1
PMBTA42DS NPN/NPN high-voltage double transistors Rev. 02 — 27 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features n High breakdown voltage n Two electrically isolated transistors n Small SMD plastic package 1.
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PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 2. Pinning information Table 2. Pinning Pin Description 1 emitter TR1 2 base TR2 3 collector TR2 4 emitter TR2 5 base TR1 6 collector TR1 Simplified outline 6 5 4 1 2 3 Symbol 6 5 4 TR1 TR2 1 2 3 006aaa677 3. Ordering information Table 3. Ordering information Type number PMBTA42DS Package Name Description Version SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4.
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PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
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PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 7. Characteristics Table 7.
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PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors mld393 1000 VBE (mV) mld394 1000 VBEsat (mV) (1) 800 (1) 800 (2) (2) 600 600 (3) 400 (3) 400 200 0 10−1 1 200 10−1 102 10 1 IC (mA) VCE = 10 V IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Fig 3. 102 10 IC (mA) Base-emitter voltage as a function of collector current; typical values Fig 4.
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PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 8. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.26 0.10 0.40 0.25 0.95 1.9 Dimensions in mm Fig 6. 04-11-08 Package outline SOT457 (SC-74) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 10. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 7. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 8. Wave soldering footprint SOT457 (SC-74) PMBTA42DS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBTA42DS_2 20090827 Product data sheet - PMBTA42DS_1 Modifications: PMBTA42DS_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .