DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 Jan 15 2004 Nov 04
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability: IC and ICM VCEO collector-emitter voltage −40 IC collector current (DC) −4 A ICRP repetitive peak collector current −5 A RCEsat equivalent on-resistance 75 mΩ • High efficiency leading to less heat generation.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V ICM peak collector current tp ≤ 1 ms − −10 A ICRP repetitive peak collector current tp ≤ 10 ms; δ ≤ 0.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor 001aaa229 1600 Ptot (mW) PBSS5540X (1) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT notes 1 and 2 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Pulse test: tp ≤ 10 ms; δ ≤ 0.2. 2.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = −30 V; IE = 0 A − − −100 nA VCB = −30 V; IE = 0 A; Tj = 150 °C − − −50 μA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − − −100 hFE DC current gain VCE = −2 V; IC = −0.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X 001aaa157 −8 IC (A) 001aaa158 −1.2 (1) VBE (V) (2) −6 (3) (1) −0.8 (2) (4) −4 (3) (5) −0.4 −2 0 −0.5 0 (1) IB1 = −11 mA. (2) IB2 = −22 mA. −1 −1.5 VCE (V) 0 −10−1 −2 (4) IB4 = −44 mA. (5) IB5 = −55 mA. −1 −10 −102 −103 −104 IC (mA) VCE = −2 V. (3) IB3 = −33 mA. (1) Tamb = −55 °C. Fig.6 Fig.7 Base-emitter voltage as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X 001aaa161 −1 001aaa162 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (1) (2) (2) −10−2 −10−3 −10−1 −1 −10 (3) −102 (3) −10−2 −10−3 −10−1 −103 −104 IC (mA) IC/IB = 20. −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) IC/IB = 100. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X Reference mounting conditions 32 mm handbook, halfpage 32 mm 10 mm 40 mm 2.5 mm 40 mm 1 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm MLE322 001aaa234 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
