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1. Product profile

1.1 General description

NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a medium power and

flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4041PX.

1.2 Features and benefits

 Very low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 High energy efficiency due to less heat generation

 AEC-Q101 qualified

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 Loadswitch

 Battery-driven devices

 Power management

 Charging circuits

 Power switches (e.g. motors, fans)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS4041NX

60 V, 6.2 A NPN low V

CEsat

(BISS) transistor

Rev. 01 — 1 April 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 60 V

collector current - - 6.2 A

peak collector current single pulse;

≤ 1ms

--15A

CEsat

collector-emitter

saturation resistance

=4A;

=400mA

[1]

-2535mΩ

Summary of content (15 pages)

PAGE 1
PBSS4041NX 60 V, 6.2 A NPN low VCEsat (BISS) transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX. 1.
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PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 collector 3 base Simplified outline Graphic symbol 2 3 3 2 1 1 sym042 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4041NX SC-62 plastic surface-mounted package; 3 leads SOT89 4. Marking Table 4.
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PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 210 K/W [2] - - 75 K/W [3] - - 50 K/W - - 20 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PAGE 5
PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 006aac176 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 10−1 10−5 0 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac177 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 10 0.2 0.1 0.05 1 0.01 10−1 10−5 0.
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PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 006aac210 1000 hFE 006aac211 16.0 (1) IB (mA) = 300 IC (A) 270 240 800 180 12.0 210 150 120 (2) 90 600 60 8.0 400 30 (3) 4.0 200 0 10−1 1 10 102 103 0.0 0.0 104 105 IC (mA) 1.0 2.0 3.0 4.0 5.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. 006aac212 1.
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PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 006aac214 1 006aac215 1 VCEsat (V) VCEsat (V) 10−1 10−1 (1) (2) (1) 10−2 10−2 (3) (2) (3) 10−3 10−1 1 10 102 103 104 105 IC (mA) 10−3 10−1 1 102 103 104 105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9.
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PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 Fig 14. Test circuit for switching times 8.
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PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 9. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 0.53 0.40 1.5 1.2 0.8 3 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 15. Package outline SOT89 (SC-62) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 11. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 4.85 solder paste occupied area 1 (3×) 1.1 (2×) 1.5 Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig 16. Reflow soldering footprint SOT89 (SC-62) 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.
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PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4041NX_1 20100401 Product data sheet - - PBSS4041NX_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved.
PAGE 13
PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 14
PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS4041NX_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved.
PAGE 15
PBSS4041NX NXP Semiconductors 60 V, 6.2 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .