DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification November 1992
NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.
NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 10 V; 50 hFE DC current gain IC = 14 mA; VCE = 10 V 20 50 fT transition frequency IC = 14 mA; VCE = 10 V; f = 500 MHz 5 GHz nA Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 0.
NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 MEA347 100 24 V handbook, halfpage 390 Ω L3 3.9 kΩ handbook, halfpage h FE 820 Ω 75 300 Ω L2 680 pF 680 pF 50 75 Ω L1 680 pF 75 Ω DUT 25 16 Ω MEA919 0 10 0 L2 = L3 = 5 H Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. 20 –I C (mA) 30 VCE = 10 V; Tj = 25 C. Fig.2 Intermodulation distortion test circuit. Fig.
NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 MEA921 MEA465 6 5 handbook, halfpage handbook, halfpage F (dB) F (dB) 5 4 4 3 3 2 2 1 1 0 10 –1 0 5 0 10 15 20 25 I C (mA) 1 f (GHz) VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 C. Ic = 2 mA; VCE = 10 V; Zs = opt.; Tamb = 25 C. Fig.6 Fig.7 Minimum noise figure as a function of collector current. November 1992 6 10 Minimum noise figure as a function of frequency.
NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
