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1. Product profile

1.1 General description

PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.

[1] Valid for all available selection groups.

1.2 Features and benefits

 High current

 Three current gain selections

 High power dissipation capability

 Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)

 Leadless very small SMD plastic package with medium power capability (SOT1061)

 AEC-Q101 qualified

1.3 Applications

1.4 Quick reference data

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Rev. 7 — 12 October 2011 Product data sheet

Table 1. Product overview

Type number

[1]

Package NPN complement

NXP JEITA JEDEC

BCP69 SOT223 SC-73 - BCP68

BC869 SOT89 SC-62 TO-243 BC868

BC69PA SOT1061 - - BC68PA

 Linear voltage regulators  Power management

 High-side switches  MOSFET drivers

 Battery-driven devices  Amplifiers

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 20 V

collector current - - 2A

peak collector current single pulse; t

 1ms - - 3A

Summary of content (24 pages)

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BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP JEITA JEDEC BCP69 SOT223 SC-73 - BCP68 BC869 SOT89 SC-62 TO-243 BC868 BC69PA SOT1061 - - BC68PA [1] NPN complement Valid for all available selection groups. 1.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max hFE DC current gain VCE = 1 V; IC = 500 mA [1] 85 - 375 hFE selection -16 VCE = 1 V; IC = 500 mA [1] 100 - 250 hFE selection -25 VCE = 1 V; IC = 500 mA [1] 160 - 375 [1] Unit Pulse test: tp  300 s;  = 0.02. 2. Pinning information Table 3.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 3. Ordering information Table 4. Ordering information Type number[1] Package Name Description Version BCP69 SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 BC869 SC-62 plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 BC69PA HUSON3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2  2  0.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 32 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 5 V IC collector current - 2 A ICM peak collector current - 3 A IB base current - 0.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1) Ptot (W) Ptot (W) (2) 1.0 (2) 1.0 (3) (3) 0.5 0.5 0.0 –75 –25 25 75 0.0 –75 125 175 Tamb (°C) –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (1) FR4 PCB, mounting pad for collector 6 cm2 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, mounting pad for collector 1 (3) FR4 PCB, standard footprint Fig 1.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 6. Thermal characteristics Table 7.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac677 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aac678 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac679 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aac680 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac681 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 102 0.1 10 0.05 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 006aac682 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac683 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.25 0.2 102 0.1 0.05 10 0.02 1 0.01 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, standard footprint Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 006aac684 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac685 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.25 0.2 102 0.1 10 1 0 10–1 10–5 0.05 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 006aac686 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.33 0.2 0.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac687 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.25 10 0.1 1 0 10–1 10–5 0.33 0.2 0.05 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 Fig 14.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac697 300 hFE 006aab403 −2.4 IC (A) −2.0 (1) IB (mA) = −18.0 −14.4 −1.6 200 −16.2 (2) −12.6 −10.8 −9.0 −1.2 −7.2 100 −5.4 −0.8 (3) −3.6 −0.4 0 -10-4 -10-3 -10-2 -10-1 −1.8 0 -1 -10 0 IC (A) VCE = 1 V −1 −2 −3 −4 VCE (V) −5 Tamb = 25 C (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = 55 C Fig 15.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac707 400 (1) hFE 006aab404 −2.4 IC (A) IB (mA) = −12.0 −2.0 −10.8 300 (2) −9.6 −1.6 −8.4 −7.2 −6.0 −1.2 200 −4.8 (3) −3.6 −0.8 −2.4 100 −0.4 0 -10-4 -10-3 -10-2 -10-1 −1.2 0 -1 -10 0 IC (A) VCE = 1 V −1 −2 −3 −4 VCE (V) −5 Tamb = 25 C (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = 55 C Fig 19.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 3 0.32 0.22 0.8 0.6 2.3 4.6 Dimensions in mm 04-11-10 Fig 23.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 1.3 0.65 max 0.35 0.25 1 1.05 0.95 2 0.45 0.35 1.1 0.9 0.3 0.2 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig 25. Package outline SOT1061 (HUSON3) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 26. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 4.85 solder paste occupied area 1.1 (2×) 1 (3×) 1.5 Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig 28. Reflow soldering footprint SOT89 (SC-62/TO-243) 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 30. Reflow soldering footprint SOT1061 (HUSON3) BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCP69_BC869_BC69PA v.7 20111012 Product data sheet - Modifications: BC869_6 BCP69_6 • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.
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NXP Semiconductors BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .