Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETs2N7002P,235, MOSFET

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

 AEC-Q101 qualified

 Logic-level compatible

 Trench MOSFET technology

 Very fast switching

1.3 Applications

 High-speed line driver

 Low-side loadswitch

 Relay driver

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

2N7002P

60 V, 360 mA N-channel Trench MOSFET

Rev. 02 — 29 July 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source

voltage

amb

=25°C --60V

gate-source

voltage

-20 - 20 V

drain current V

=10V; T

amb

=25°C

[1]

--360mA

Static characteristics

DSon

drain-source

on-state

resistance

=10V; I

=500mA;

= 25 °C; pulsed; t

≤ 300 µs;

δ≤0.01

-11.6Ω

Summary of content (15 pages)

PAGE 1
2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compatible Very fast switching 1.
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N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S mbb076 SOT23 (TO-236AB) 3. Ordering information Table 3. Ordering information Type number Package 2N7002P Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa001 120 017aaa002 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. −25 25 75 0 −75 125 175 Tamb (°C) Normalized total power dissipation as a function of ambient temperature Fig 2.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 310 370 K/W [2] - 260 300 K/W - - 115 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.1 1.75 2.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa017 0.7 VGS = 4.0 V ID (A) 0.6 017aaa018 10−3 3.5 V ID (A) 0.5 10−4 3.25 V (1) 0.4 0.3 (3) (2) 3.0 V 10−5 0.2 2.75 V 0.1 2.5 V 10−6 0.0 0.0 1.0 2.0 3.0 4.0 0 1 2 VDS (V) 3 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa019 10.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa021 1.0 017aaa022 2.4 ID (A) a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 (2) 0.0 0.0 1.0 (1) 2.0 3.0 4.0 5.0 VGS (V) 0.0 −60 0 60 120 180 Tamb (°C) VDS > ID × RDSon (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa023 3.0 VGS(th) (V) Fig 11.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa025 5.0 VDS VGS (V) ID 4.0 VGS(pl) 3.0 VGS(th) VGS 2.0 QGS1 QGS2 QGS 1.0 QGD QG(tot) 003aaa508 0.0 0.0 0.2 0.4 0.6 0.8 QG (nC) ID = 300 mA; VDS = 30 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa026 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 2N7002P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002P v.2 20100729 Product data sheet - 2N7002P_1 Modifications: 2N7002P_1 2N7002P Product data sheet • • Correction of thermal values. Correction of various characteristics values including related graphs.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations.
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2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . .