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MAX660

CMOS Monolithic Voltage Converter

________________________________________________________________ Maxim Integrated Products 1

19-3293; Rev. 2; 9/96

_______________General Description

The MAX660 monolithic, charge-pump voltage inverter

converts a +1.5V to +5.5V input to a corresponding

-1.5V to -5.5V output. Using only two low-cost

capacitors, the charge pump’s 100mA output replaces

switching regulators, eliminating inductors and their

associated cost, size, and EMI. Greater than 90%

efficiency over most of its load-current range combined

with a typical operating current of only 120µA provides

ideal performance for both battery-powered and board-

level voltage conversion applications. The MAX660 can

also double the output voltage of an input power supply

or battery, providing +9.35V at 100mA from a +5V

input.

A frequency control (FC) pin selects either 10kHz typ or

80kHz typ (40kHz min) operation to optimize capacitor

size and quiescent current. The oscillator frequency

can also be adjusted with an external capacitor or

driven with an external clock. The MAX660 is a pin-

compatible, high-current upgrade of the ICL7660.

The MAX660 is available in both 8-pin DIP and small-

outline packages in commercial, extended, and military

temperature ranges.

For 50mA applications, consider the MAX860/MAX861

pin-compatible devices (also available in ultra-small

µMAX packages).

________________________Applications

Laptop Computers

Medical Instruments

Interface Power Supplies

Hand-Held Instruments

Operational-Amplifier Power Supplies

___________________________ Features

♦ Small Capacitors

♦ 0.65V Typ Loss at 100mA Load

♦ Low 120µA Operating Current

♦ 6.5Ω Typ Output Impedance

♦ Guaranteed R

OUT

< 15Ω for C1 = C2 = 10µF

♦ Pin-Compatible High-Current ICL7660 Upgrade

♦ Inverts or Doubles Input Supply Voltage

♦ Selectable Oscillator Frequency: 10kHz/80kHz

♦ 88% Typ Conversion Efficiency at 100mA

to GND)

MAX660

CAP+

GND

CAP-

V+

OSC

OUT

CAP+

GND

CAP-

V+

OSC

OUT

1µF to 150µF

VOLTAGE INVERTER

POSITIVE VOLTAGE DOUBLER

1.5V TO 5.5V

INVERTED

NEGATIVE

VOLTAGE

OUTPUT

1µF to 150µF

DOUBLED

POSITIVE

VOLTAGE

OUTPUT

1µF to 150µF

2.5V TO 5.5V

_________Typical Operating Circuits

V+

OSC

OUT

CAP-

GND

CAP+

MAX660

DIP/SO

TOP VIEW

__________________Pin Configuration

______________Ordering Information

PART TEMP. RANGE PIN-PACKAGE

MAX660CPA 0°C to +70°C 8 Plastic DIP

MAX660CSA 0°C to +70°C 8 SO

MAX660C/D 0°C to +70°C Dice*

MAX660EPA -40°C to +85°C 8 Plastic DIP

MAX660ESA -40°C to +85°C 8 SO

*Contact factory for dice specifications.

MAX660MJA -55°C to +125°C 8 CERDIP

For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800

Summary of content (12 pages)

PAGE 1
9-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V output. Using only two low-cost capacitors, the charge pump’s 100mA output replaces switching regulators, eliminating inductors and their associated cost, size, and EMI.
PAGE 2
MAX660 CMOS Monolithic Voltage Converter ABSOLUTE MAXIMUM RATINGS Supply Voltage (V+ to GND, or GND to OUT) .......................+6V Operating Temperature Ranges LV Input Voltage ...............................(OUT - 0.3V) to (V+ + 0.3V) MAX660C_ _ ........................................................0°C to +70°C FC and OSC Input Voltages........................The least negative of MAX660E_ _ .....................................................-40°C to +85°C (OUT - 0.3V) or (V+ - 6V) to (V+ + 0.
PAGE 3
CMOS Monolithic Voltage Converter All curves are generated using the test circuit of Figure 1 with V+ =5V, LV = GND, FC = open, and TA = +25°C, unless otherwise noted. The charge-pump frequency is one-half the oscillator frequency. Test results are also valid for doubler mode with GND = +5V, LV = OUT, and OUT = 0V, unless otherwise noted; however, the input voltage is restricted to +2.5V to +5.5V.
PAGE 4
_____________________________Typical Operating Characteristics (continued) OSCILLATORFREQUENCY FREQUENCY OSCILLATOR vs.SUPPLY SUPPLYVOLTAGE VOLTAGE vs. 80 ILOAD = 10mA 76 72 ILOAD = 80mA 68 MAX660-7 LVLV= =OPEN OPEN 60 60 FC = V+, OSC = OPEN FC = V+, OSC = OPEN 40 40 LV = GND 20 20 0 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1.0 1.5 2.0 SUPPLY 2.5 3.0 3.5 (V) 4.0 4.5 5.0 5. VOLTAGE SUPPLY VOLTAGE (V) 100 OSCILLATOR FREQUENCY (kHz) OSCILLATOR FREQUENCY vs.
PAGE 5
CMOS Monolithic Voltage Converter 80 60 40 250 100 0.33 1.0 2.0 2.2 4.7 10 22 47 100 220 CAPACITANCE (µF) 0.33 1.0 2.0 2.2 4.7 10 22 47 100 220 OUTPUT CURRENT vs. CAPACITANCE: VIN = +3.0V, VOUT = -2.7V OUTPUT CURRENT vs. CAPACITANCE: VIN = +3.0V, VOUT = -2.
PAGE 6
MAX660 CMOS Monolithic Voltage Converter ______________Detailed Description one-half of the charge-pump cycle. This introduces a peak-to-peak ripple of: IOUT + IOUT (ESRC2) VRIPPLE = 2(fPUMP) (C2) The MAX660 capacitive charge-pump circuit either inverts or doubles the input voltage (see Typical Operating Circuits). For highest performance, low effective series resistance (ESR) capacitors should be used. See Capacitor Selection section for more details.
PAGE 7
________________Capacitor Selection Three factors (in addition to load current) affect the MAX660 output voltage drop from its ideal value: 1) MAX660 output resistance 2) Pump (C1) and reservoir (C2) capacitor ESRs 3) C1 and C2 capacitance The voltage drop caused by MAX660 output resistance is the load current times the output resistance. Similarly, the loss in C2 is the load current times C2’s ESR.
PAGE 8
MAX660 CMOS Monolithic Voltage Converter The following is a list of manufacturers who provide low-ESR electrolytic capacitors: Manufacturer/ Series Phone Fax AVX TPS Series (803) 946-0690 (803) 626-3123 Low-ESR tantalum SMT AVX TAG Series (803) 946-0690 (803) 626-3123 Low-cost tantalum SMT Matsuo 267 Series (714) 969-2491 (714) 960-6492 Low-cost tantalum SMT Sprague 595 Series (603) 224-1961 (603) 224-1430 Aluminum electrolytic thru-hole Sanyo MV-GX Series (619) 661-6835 (619) 661-1055
PAGE 9
CMOS Monolithic Voltage Converter This dual function is illustrated in Figure 5. In this circuit, capacitors C1 and C3 perform the pump and reservoir functions respectively for generation of the negative voltage. Capacitors C2 and C4 are respectively pump and reservoir for the multiplied positive voltage. This circuit configuration, however, leads to higher source impedances of the generated supplies. This is due to the finite impedance of the common charge-pump driver.
PAGE 10
MAX660 CMOS Monolithic Voltage Converter ___________________Chip Topography FC V+ CAP+ GND OSC 0.120" (3.05mm) LV CAP- OUT 0.073" (1.85mm) TRANSISTOR COUNT = 89 SUBSTRATE CONNECTED TO V+.
PAGE 11
CMOS Monolithic Voltage Converter D E DIM E1 A A1 A2 A3 B B1 C D1 E E1 e eA eB L A3 A A2 L A1 0° - 15° C e B1 eA B eB D1 Plastic DIP PLASTIC DUAL-IN-LINE PACKAGE (0.300 in.) INCHES MAX MIN 0.200 – – 0.015 0.175 0.125 0.080 0.055 0.022 0.016 0.065 0.045 0.012 0.008 0.080 0.005 0.325 0.300 0.310 0.240 – 0.100 – 0.300 0.400 – 0.150 0.115 PKG. DIM PINS P P P P P N D D D D D D 8 14 16 18 20 24 INCHES MAX MIN 0.348 0.390 0.735 0.765 0.745 0.765 0.885 0.915 1.015 1.045 1.14 1.
PAGE 12
MAX660 CMOS Monolithic Voltage Converter ___________________________________________Package Information (continued) DIM E1 E D A 0°-15° Q L L1 e C B1 B S1 S CERDIP CERAMIC DUAL-IN-LINE PACKAGE (0.300 in.) A B B1 C E E1 e L L1 Q S S1 INCHES MIN MAX – 0.200 0.014 0.023 0.038 0.065 0.008 0.015 0.220 0.310 0.290 0.320 0.100 0.125 0.200 0.150 – 0.015 0.070 – 0.098 0.005 – DIM PINS D D D D D D 8 14 16 18 20 24 MILLIMETERS MIN MAX – 5.08 0.36 0.58 0.97 1.65 0.20 0.38 5.59 7.87 7.37 8.13 2.54 3.