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General Description

The MAX2601/MAX2602 are RF power transistors opti-

mized for use in portable cellular and wireless equipment

that operates from three NiCd/NiMH cells or one Li-Ion

cell. These transistors deliver 1W of RF power from a

3.6V supply with efficiency of 58% when biased for con-

stant-envelope applications (e.g., FM or FSK). For NADC

(IS-54) operation, they deliver 29dBm with -28dBc ACPR

from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF

power transistor. The MAX2602 includes a high-

performance silicon bipolar RF power transistor, and a

biasing diode that matches the thermal and process

characteristics of the power transistor. This diode is

used to create a bias network that accurately controls

the power transistor’s collector current as the tempera-

ture changes.

The MAX2601/MAX2602 can be used as the final stage

in a discrete or module power amplifier. Silicon bipolar

technology eliminates the need for voltage inverters

and sequencing circuitry, as required by GaAsFET

power amplifiers. Furthermore, a drain switch is not

required to turn off the MAX2601/MAX2602. This

increases operating time in two ways: it allows lower

system end-of-life battery voltage, and it eliminates the

wasted power from a drain-switch device.

The MAX2601/MAX2602 are available in thermally

enhanced, 8-pin SO packages, which are screened to

the extended temperature range (-40°C to +85°C).

________________________Applications

Narrow-Band PCS (NPCS)

915MHz ISM Transmitters

Microcellular GSM (Power Class 5)

AMPS Cellular Phones

Digital Cellular Phones

Two-Way Paging

CDPD Modems

Land Mobile Radios

____________________________Features

♦♦

Low Voltage: Operates from 1 Li-Ion or

3 NiCd/NiMH Batteries

♦♦

DC-to-Microwave Operating Range

♦♦

1W Output Power at 900MHz

♦♦

On-Chip Diode for Accurate Biasing (MAX2602)

♦♦

Low-Cost Silicon Bipolar Technology

♦♦

Does Not Require Negative Bias or Supply Switch

♦♦

High Efficiency: 58%

MAX2601/MAX2602

3.6V, 1W RF Power Transistors

for 900MHz Applications

________________________________________________________________

Maxim Integrated Products

19-1185; Rev 3; 9/08

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,

or visit Maxim’s website at www.maxim-ic.com.

Ordering Information

Typical Application Circuit appears at end of data sheet.

PART TEMP RANGE PIN-PACKAGE

MAX2601ESA -40°C to +85°C 8 SOIC

MAX2602ESA -40°C to +85°C 8 SOIC

Pin Configurations

PSOPII

TOP VIEW

PSOPII

MAX2602

BIAS

MAX2601

EVALUATION KIT

AVAILABLE

Summary of content (6 pages)

PAGE 1
9-1185; Rev 3; 9/08 KIT ATION EVALU LE B A IL A AV 3.6V, 1W RF Power Transistors for 900MHz Applications The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply.
PAGE 2
MAX2601/MAX2602 3.6V, 1W RF Power Transistors for 900MHz Applications ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage, Shorted Base (VCES) ....................17V Emitter Base Reverse Voltage (VEBO)...................................2.3V BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V Average Collector Current (IC)........................................1200mA Continuous Power Dissipation (TA = +70°C) SOIC (derate 80mW/°C above +70°C) (Note 1) .............6.
PAGE 3
.6V, 1W RF Power Transistors for 900MHz Applications TWO-TONE OUTPUT POWER AND IM3 vs. COLLECTOR CURRENT 0.8 VBB = 1.00V 30 VBB = 0.95V 0.6 VBB = 0.90V 0.4 POUT 19 29 18 IM3 28 0.2 35 POUT, IM3, AND IM5 ARE RMS COMPOSITE TWO-TONE POWER LEVELS 25 POUT IM3 15 17 5 16 -5 IM5 VBB = 0.85V VBB = 0.80V 27 0 0 1 2 3 4 0.4 6 5 0.5 0.6 0.7 0.8 5 10 15 20 25 VCE (V) ICC (A) INPUT POWER (dBm) TWO-TONE OUTPUT POWER, IM3, IM5 vs. INPUT POWER (f = 433MHz) ACPR vs.
PAGE 4
MAX2601/MAX2602 3.6V, 1W RF Power Transistors for 900MHz Applications VCC VBB 5Ω 1000pF 0.1μF 100nH 24Ω 1000pF 1 4 8 1000pF RFIN 0.1μF L1 1000pF T2 10pF 2pF 5 2pF T1 12pF 2, 6, 7 BACKSIDE SLUG L1 = COILCRAFT A05T INDUCTOR, 18.5nH T1, T2 = 1", 50Ω TRANSMISSION LINE ON FR-4 Figure 1. Test Circuit _______________Detailed Description MAX2601/MAX2602 The MAX2601/MAX2602 are high-performance silicon bipolar transistors in power-enhanced, 8-pin SO packages.
PAGE 5
3.6V, 1W RF Power Transistors for 900MHz Applications Optimum Port Impedance The source and load impedances presented to the MAX2601/MAX2602 have a direct impact upon its gain, output power, and linearity. Proper source- and loadterminating impedances (ZS and ZL) presented to the power transistor base and collector will ensure optimum performance.
PAGE 6
MAX2601/MAX2602 3.6V, 1W RF Power Transistors for 900MHz Applications Revision History PAGES CHANGED REVISION NUMBER REVISION DATE 2 5/97 — — 3 9/08 Removed die version from Ordering Information 1 DESCRIPTION Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.