Datasheet

© IXYS All rights reserved
1 - 2
20100920b
VUO 36
IXYS reserves the right to change limits, test conditions and dimensions.
I
dAV
= 35 A
V
RRM
= 800-1800 V
Three Phase Rectifier Bridge
Features
• Package with ¼" fast-on terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature & power cycling
Symbol Conditions Maximum Ratings
I
dAV
I
dAVM
T
C
= 85°C, module
T
C
= 62°C, module
27
35
A
A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
550
600
A
A
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
500
550
A
A
I
2
t
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
1520
1520
A
2
s
A
2
s
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
1250
1250
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
150
-40...+150
°C
°C
°C
V
ISOL
50/60 Hz, RMS t = 1 min
I
ISOL
< 1 mA t = 1 s
2500
3000
V~
V~
M
d
Mounting torque (M5)
(10-32 UNF)
2 ±10%
18 ±10%
Nm
lb.in.
Weight
Typ. 22 g
V
RSM
V
RRM
Type
V V
900 800 VUO 36-08NO8
1300 1200 VUO 36-12NO8
1500 1400 VUO 36-14NO8
1700 1600 VUO 36-16NO8
1900 1800 VUO 36-18NO8
Symbol Conditions Characteristic Values
I
R
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= T
VJM
0.3
2.0
mA
mA
V
F
I
F
= 150 A T
VJ
= 25°C 1.7 V
V
T0
r
t
For power-loss calculations only 0.8
7.4
V
mW
R
thJC
R
thJH
per diode; 120° el.
per module
per diode; 120° el.
per module
7.50
1.25
8.40
1.40
K/W
K/W
K/W
K/W
d
S
d
A
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
+
~
~
~
-
+
-
~
~
~
Dimensions in mm (1 mm = 0.0394“)
6.3 x 0.8
A
B
C
D
E
22.1 ±0.5
10 ±0.2
28.5 ±0.2
8 ±0.3
12 ±0.3
28.5 ±0.2
12 ±0.3