Datasheet

© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1000 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 32 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
96 A
I
A
T
C
= 25°C 32A
E
AS
T
C
= 25°C2J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 50 V/ns
P
D
T
C
= 25°C 1250 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 3mA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 3.5 6.5 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 50 μA
T
J
= 125°C 3 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 320 mΩ
HiperFET
TM
Power MOSFETs
Q3-Class
IXFK32N100Q3
IXFX32N100Q3
V
DSS
= 1000V
I
D25
= 32A
R
DS(on)
≤≤
≤≤
≤ 320m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 300ns
DS100300B(10/12)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
D
S
TO-264 (IXFK)
S
G
D
Tab
Features
z
International Standard Packages
z
Low Intrinsic Gate Resistance
z
Avalanche Rated
z
Low Package Inductance
z
Fast Intrinsic Rectifier
z
Low R
DS(on)
and Q
G
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
DC-DC Converters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
Temperature and Lighting Controls