Datasheet

DMA 150 E 1600 NA
tentative
Standard Rectifier
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
V
I A
V
F
1.23
R 0.25 K/W
V = V
R
1
2
3
4
min.
150
t = 10 ms; (50 Hz), sine
Applications:
V
RRM
V1600
200T = 25°C
VJ
T = °C
VJ
mA3.5
Package:
Part number
V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
90
d =
P
tot
500 WT = 25°C
C
T
VJ
150 °C-40
V
I
RRM
=
=
1600
150
150
T = °C
VJ
45
DMA 150 E 1600 NA
V
A
1600
1600
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
1.47
T = 25°C
VJ
C
J
60
j
unction capacitance
V = V; f = 1 MHz400 T = 25°C
150
V
F0
V0.83T = °C
VJ
150
r
F
2
mΩ
V1.13T = °C
VJ
I = A
F
V
150
1.43
I = A
F
300
I = A
F
300
threshold voltage
slope resistance
for power loss calculation only
Backside: Isolated
T = °C
VJ
150
I²t T = °C45
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V
F
= 1.13
V
● Housing:
Single Diode
SOT-227B (minibloc)
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
VJ
R
VJ
R
R
VJ
µA
pF
thermal resistance junction to case
thJC
rectangular
0.5
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
FAV
average forward current
FAV
125
kA²s
kA²s
kA²s
kA²s
kA
kA
kA
kA
3.00
3.24
32.5
31.6
2.55
2.76
45.0
43.7
IXYS reserves the right to change limits, conditions and dimensions. 20100318
Data according to IEC 60747and per diode unless otherwise specified
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