Datasheet

ManualsBrandsHONEYWELL ManualsIR ComponentsIR emitter 880 nm 15 ° 3 mm Radial lead

AlGaAs Infrared Emitting Diode

SEP8705

DESCRIPTION

FEATURES

T-1 package

•

15¡ (nominal) beam angle

•

880 nm wavelength

•

Consistent optical properties

•

Higher output than GaAs at equivalent drive

current

•

Mechanically and spectrally matched to

SDP8405 phototransistor and SDP8105

photodarlington

•

The SEP8705 is an aluminum gallium arsenide infrared

emitting diode transfer molded in a T-1 smoke gray

plastic package. Transfer molding of this device assures

superior optical centerline performance compared to

other molding processes. These devices typically

exhibit 70% greater power intensity compared to GaAs

devices at the same forward current. Lead lengths are

staggered to provide a simple method of polarity

identification.

(.51)

.020 SQ. LEAD

TYP

.050

(1.27)

DIA.

(3.94)

.155

ANODE

CATHODE

DIA.

.125 (3.18)

.115 (2.92)

MIN.

(12.7)

.500

.03(.76)

.180 (4.57)

.200 (5.08)

MAX.

(6.35)

.250

.05(1.27)

DIM_101.ds4

INFRA-55.TIF

OUTLINE DIMENSIONS

in inches (mm)

3 plc decimals

±0.005(0.12)

Tolerance

2 plc decimals

±0.020(0.51)

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.

Summary of content (4 pages)

PAGE 1
SEP8705 AlGaAs Infrared Emitting Diode FEATURES • T-1 package • 15¡ (nominal) beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington INFRA-55.TIF DESCRIPTION The SEP8705 is an aluminum gallium arsenide infrared emitting diode transfer molded in a T-1 smoke gray plastic package.
PAGE 2
SEP8705 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) 50 mA 70 mW [À] -40¡C to 85¡C -40¡C to 85¡C 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C.
PAGE 3
SEP8705 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 gra_027.ds4 Normalized radiant intensity Relative intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 Radiant Intensity vs Forward Current 5.0 TA = 25 °C 2.0 1.0 0.5 0.2 0.1 10 +10 +20 +30 +40 Fig. 4 Forward Voltage vs Forward Current gra_201.ds4 1.6 Forward voltage - V Forward voltage - V 1.4 1.3 1.2 1.1 100 Forward Voltage vs Temperature gra_208.ds4 1.55 1.50 1.45 1.
PAGE 4
SEP8705 AlGaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature gra_130.ds4 Relative power output 10 5.0 IF = 40 mA IF = 30 mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50 +75 +100 TA - Free-air temperature - (°C) All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible.