Datasheet

ManualsBrandsHONEYWELL ManualsPhotodiodes & PhototransistorsPhototransistor 4.57 x 3.3 mm

Silicon Phototransistor

SDP8436

DESCRIPTION

FEATURES

Side-looking plastic package

•

18¡ (nominal) acceptance angle

•

Enhanced coupling distance

•

Internal visible light rejection filter

•

Low profile for design flexibility

•

Wide sensitivity ranges

•

Mechanically matched to SEP8736 infrared

emitting diode

•

The SDP8436 is an NPN silicon phototransistor molded

in a black plastic package which combines the mounting

advantages of a side-looking package with the narrow

acceptance angle and high optical gain of a T-1

package. The SDP8436 is designed for those

applications which require longer coupling distances

than standard side-looking devices can provide, such

as touch screens. The device is also well suited to

applications in which adjacent channel crosstalk could

be a problem. The package is highly transmissive to the

IR source energy while it provides effective shielding

against visible ambient light.

DIM_019.ds4

INFRA-82.TIF

OUTLINE DIMENSIONS

in inches (mm)

3 plc decimals

±0.005(0.12)

Tolerance

2 plc decimals

±0.020(0.51)

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.

128

Summary of content (4 pages)

PAGE 1
SDP8436 Silicon Phototransistor FEATURES • Side-looking plastic package • 18¡ (nominal) acceptance angle • Enhanced coupling distance • Internal visible light rejection filter • Low profile for design flexibility • Wide sensitivity ranges • Mechanically matched to SEP8736 infrared emitting diode INFRA-82.
PAGE 2
SDP8436 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) 30 V 5V 100 mW [À] -40¡C to 85¡C -40¡C to 85¡C 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.
PAGE 3
SDP8436 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr Fig. 1 Responsivity vs Angular Displacement Fig. 2 gra_013.ds4 Collector Current vs Ambient Temperature Normalized collector current -40 -30 -20 -10 0 1.6 1.2 0.8 0.4 0.0 +10 +20 +30 +40 0 Angular displacement - degrees Fig. 3 gra_039.ds4 2.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Relative response cir_004.
PAGE 4
SDP8436 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 0.0 600 Coupling Characteristics with SEP8736 gra_034.ds4 10 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Normalized light current Relative response gra_050.ds4 1.0 0.1 0.01 0.001 700 800 900 1000 1100 1200 0.1 Wavelength - nm 1.0 10 Lens-to-lens separation - inches All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible.