Datasheet

ManualsBrandsHONEYWELL ManualsPhotodiodes & PhototransistorsPhototransistor 3 mm

Silicon Phototransistor

SDP8405

DESCRIPTION

FEATURES

T-1 plastic package

•

20¡ (nominal) acceptance angle

•

Consistent optical properties

•

Wide sensitivity ranges

•

Mechanically and spectrally matched to

SEP8505 and SEP8705 infrared emitting diodes

•

The SDP8405 is an NPN silicon phototransistor transfer

molded in a T-1 clear plastic package. Transfer molding

of this device assures superior optical centerline

performance compared to other molding processes.

Lead lengths are staggered to provide a simple method

of polarity identification.

(.51)

.020SQ.LEAD

TYP

.050

(1.27)

DIA.

(3.94)

.155

EMITTER

COLLECTOR

DIA.

.125(3.18)

.115(2.92)

MIN.

(12.7)

.500

.03(.76)

.180(4.57)

.200(5.08)

MAX.

(6.35)

.250

.05(1.27)

DIM_100.ds4

INFRA-22.TIF

OUTLINE DIMENSIONS

in inches (mm)

3 plc decimals

±0.005(0.12)

Tolerance

2 plc decimals

±0.020(0.51)

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.

116

Summary of content (4 pages)

PAGE 1
SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ (nominal) acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF DESCRIPTION The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes.
PAGE 2
SDP8405 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) 30 V 5V 70 mW [À] -40¡C to 85¡C -40¡C to 85¡C 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C.
PAGE 3
SDP8405 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr Fig. 1 Responsivity vs Angular Displacement Fig. 2 gra_047.ds4 Collector Current vs Ambient Temperature Normalized collector current -40 -30 -20 -10 0 1.6 1.2 0.8 0.4 0.0 +10 +20 +30 +40 0 Angular displacement - degrees Fig. 3 gra_039.ds4 2.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Relative response cir_004.
PAGE 4
SDP8405 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Coupling Characteristics with SEP8505 gra_029.ds4 10 7 Light current - mA Relative response gra_036.ds4 VCE = 5 V IF = 25 mA TA = 25 °C 4 2 1 0.7 0.4 0.2 0.1 400 600 800 1000 1200 0.01 Wavelength - nm 0.02 0.04 0.1 0.2 0.4 0.