Harman 5G NAD Design Specification Document NAD SAMSUNG S5123 Model SA-N9000 OEM D Hardware Guide Version 1.3 (2020.12.03) Confidential and Proprietary – Samsung Electronics Co. & Harman ⓒ 2019 Samsung Electronics Co., Ltd. & Harman All rights reserved. Disclaimer: This information is confidential and proprietary and should not be reproduced in whole or part unless authorized in writing by the authorizing person of Samsung Electronics & Harman.
REVISION HISTORY Version Date Description 0.1 0.2 2019.09.16 C2 Initial document release Yoongoo Nam 2019.10.11 Power interface revised Yoongoo Nam 0.3 2019.11.07 Pin map updated Yoongoo Nam 0.4 2019.12.03 Support band update Yoongoo Nam 0.5 2019.12.05 Pinmap update for TCAM2 Yoongoo Nam 0.6 2020.01.06 Support band update Yoongoo Nam 0.7 2020.02.24 Pinmap update for TCAM2 Yoongoo Nam 0.8 2020.03.10 Support band update Yoongoo Nam 0.9 2020.04.
Table of contents 1 2 3 General .....................................................................................................................................................................8 1.1 Document purpose ..................................................................................................................................8 1.2 Function overview……...........................................................................................................................8 1.2.
.2.2 Data Services and Power Class………….......................................................................................42 4.2.3 EN-DC…….……….......................................................................................................................42 4.3 4.4 4.5 Conducted RF Measurement.................................................................................................................43 4.3.1 Test Environment………... .......................................................
6.3 Packaging…………….......................................................................................................................... 67 6.4 Label…...………………....................................................................................................................... 68 6.5 Storage Guidelines................................................................................................................................. 68 6.6 Moisture Sensitivity........................................
Index of Figure Figure 1-1 Circuit block diagram of the module…….................................................................................. 13 Figure 1-2 Application block diagram of the module................................................................................. 14 Figure 1-3 Component Layout………………………................................................................................. 15 Figure 2-1 LGA Interface (TOP View).......................................................................
Index of Table Table 2-1 Definitions of pins on the LGA interface...................................................................................... 17 Table 3-1 Definitions of the pins on the power supply interface…............................................................ 31 Table 3-2 Output power supply interface signals…....................................................................................... 32 Table 3-3 UART interface signals………………………..…..............................................
1 General 1.1 Document purposes WAVE is a 5G module, which supports 3GPP Release 15 NR features including Sub-6 GHz. It also supports all legacy modem features, including 4G LTE, 3G FDD, 3G TDD, and 2G GSM. This document describes the module information about WAVE module. This document helps hardware engineers to understand the interface specifications, electrical features and related product guidelines of the SAMSUNG WAVE Network Access Device module. 1.2 Function overview 1.2.
SKU Global CA Combination (Downlink) - 2CA 1A-1A, 1C, 1A-3A, 1A-5A, 5A-1A, 1A-7A, 7A-1A, 1A-8A, 8A-1A, 1A-18A, 18A-1A, 1A-19A, 19A-1A, 1A-20A, 20A-1A, 1A-26A, 26A-1A, 1A-28A, 28A-1A, 1A-32A, 1A38A, 1A-40A, 2A-2A, 2C, 2A-4A, 4A-2A, 2A-5A, 5A-2A, 2A-12A, 12A-2A, 2A-13A, 13A-2A, 2A-17A, 17A-2A, 2A-28A, 2A-29A, 2A-30A, 2A-66A, 2A-71A, 71A-2A, 3A3A, 3B, 3C, 3A-5A, 5A-3A, 3A-7A, 7A-3A, 3A-8A, 8A-3A, 3A-18A, 18A-3A, 3A-19A, 19A-3A, 3A-20A, 20A-3A, 3A-26A, 26A-3A, 3A-28A, 28A-3A, 3A-32A, 3A-38A, 3A40A, 4A-4A, 4A-
3A-8A-40A, 3A-1A-8A-40A, 8A-1A-3A-40A, 1A-3A-20A-32A, 3A-1A-20A-32A, 20A1A-3A-32A, 1A-3A-40C, 3A-1A-40C, 1A-5A-7A-7A, 5A-1A-7A-7A, 7A-7A-1A-5A, 1A-7A-7A-8A, 7A-7A-1A-8A, 8A-1A-7A-7A, 1A-7C-20A, 7C-1A-20A, 20A-1A-7C, 1A-7A-7A-26A, 7A-7A-1A-26A, 26A-1A-7A-7A, 1A-7C-28A, 7C-1A-28A, 28A-1A-7C , 1A-7A-20A-32A, 7A-1A-20A-32A, 20A-1A-7A-32A, 1A-8A-40C, 8A-1A-40C, 2A2A-4A-4A, 4A-4A-2A-2A, 2A-2A-4A-5A, 4A-2A-2A-5A, 5A-2A-2A-4A, 2A-2A-4A12A, 4A-2A-2A-12A, 12A-2A-2A-4A, 2C-5B, 5B-2C, 2A-2A-5A-30A, 5A-2A-2A-30A, 2C-5A-
66A, 66A-2A-2A-12A-30A, 2A-2A-12A-66A-66A, 12A-2A-2A-66A-66A, 66A-66A2A-2A-12A, 2A-2A-66D, 66D-2A-2A, 2A-2A-66A-66B, 66A-66B-2A-2A, 66B-66A2A-2A, 2A-2A-66A-66C, 66A-66C-2A-2A, 66C-66A-2A-2A, 2A-4A-5B-30A, 4A-2A5B-30A, 5B-2A-4A-30A, 2A-5B-30A-66A, 5B-2A-30A-66A, 66A-2A-5B-30A, 2A-5B66A-66A, 5B-2A-66A-66A, 66A-66A-2A-5B, 2A-5B-66B, 5B-2A-66B, 66B-2A-5B, 2A-5B-66C, 5B-2A-66C, 66C-2A-5B, 2A-5A-30A-66A-66A, 5A-2A-30A-66A-66A, 66A-66A-2A-5A-30A, 2A-5A-66D, 5A-2A-66D, 66D-2A-5A, 2A-12B-66A-66A, 12B2A-66A-66A, 66A-
1.2.2 Function overview Feature Description Physical Dimensions Dimensions (L × W × H): 43 mm × 38 mm × 3.4 mm Operating Temperature Normal operating temperature: -40℃ to +85℃ Storage Temperature -40℃ to +95℃ Humidity RH5% to RH95% Power Voltage DC 4.0 V to 4.4 V (typical value is 4.2 V) Antenna Interface antenna pad x 4 1) 2) Weight: about 12 g Extended operating temperature: -40℃ to +95℃ –10°C ~ +55°C This range is defined by 3GPP.
1.2.3 Circuit Block Diagram The module is developed based on Samsung platform. Figure 1-1 shows the circuit block diagram.
Antenna NAD Module Application Interface UART/SPI USIM GPIO Power Supply Wake up Power on / power off RESET ADC I2S PCIe RGMII I2C eMMC UART/SPI USIM GPIO Power Supply Wake up Power on / power off RESET ADC I2S PCIe RGMII I2C eMMC SPI Interface UART Interface USIM Interface eSIM Interface GPIO External Power Supply Audio Interface RF Pad ADC Interface I2C Interface SDIO Interface PCIe Interface MII Interface eMMC Interface Serial Peripheral Interface.
2 Description of the Application Interfaces 2.1 LGA Interface © SAMSUNG Electronics Co., Ltd.
Figure 2-1 LGA Interface (TOP View) Figure 2-2 Appearance of the module (Without Label) © SAMSUNG Electronics Co., Ltd.
The position of the first pin where the triangle mark is located. Table 2-1 Definitions of pins on the LGA interface No Name Voltage Level Internal I/O Pull Connection to TCU Description state Connection to TCU External AP eAP (BMW WAVE) (VOLVO TCAM2) UG1V8_NAD UG1V8_NAD UG4V2 UG4V2 UG4V2 UG4V2 UG4V2 UG4V2 POWER F15 VDD_1P8_AP 1.8 Q32 VPH_PWR Q34 VPH_PWR R33 VPH_PWR T33 VPH_PWR_5V T35 VPH_PWR_5V U34 VPH_PWR_5V P13 VLDO2_CP_VDD180 1.8 R21 VLDO10_CP_USIM0 1.
G2 GNSS_ANT_L1 - - - GNSS L1 ANT E2 GNSS_ANT_L5 - - - GNSS L5 ANT Leave this pin open(floating) Leave this pin open(floating) GNSS_ANT_L1 GNSS_ANT_L5 Antenna switching M8 RFFE_DATA 1.8 O - N9 RFFE_CLK 1.8 O - E12 GPADC2 1.8 I - L33 PCIE1_REFCLK_N 0.85 B - L35 PCIE1_REFCLK_P 0.
Audio I/F Serial Data Output Audio I/F Left/Right Channel B9 SPEECH_I2S_D_OUT_CP 1.8 O - NAD_I2S_DOUT NAD_I2S_DOUT B7 SPEECH_I2S_LRCK_CP 1.8 I - NAD_I2S_LRCK NAD_I2S_LRCK B13 CP_I2S1_BCK_RSV 1.8 I - Audio I/F Clock B11 CP_I2S1_DIN_RSV 1.8 I - Audio I/F Serial Data Input open(floating) C12 CP_I2S1_DOUT_RSV 1.8 O - Audio I/F Serial Data Output open(floating) C10 CP_I2S1_LRCK_RSV 1.
O12 UART3_RXD 1.8 I - CP UART3 Rx Data O14 UART3_TXD 1.8 O - CP UART3 Tx Data 1.8 O - NAD module (Max Leave this pin open(floating) Leave this pin open(floating) UART3_RXD UART3_TXD TCU thermal detection Thermistor on D11 CP_THM CP_THM CP_THM 1.8V) EMMC Interface F35 EMMC_CLK 1.8 O - EMMC_CLK G34 EMMC_CMD 1.8 O - EMMC_CMD H33 EMMC_D(0) 1.8 B - EMMC_D(0) I36 EMMC_D(1) 1.8 B - EMMC_D(1) G32 EMMC_D(2) 1.8 B - EMMC_D(2) I32 EMMC_D(3) 1.
D33 XETH0_TXD0 1.8 O - XETH0_TXD0 E34 XETH0_TXD1 1.8 O - XETH0_TXD1 D35 XETH0_TXD2 1.8 O - XETH0_TXD2 E36 XETH0_TXD3 1.8 O - XETH0_TXD3 Leave this pin XETH0_TXD0 open(floating) Leave this pin XETH0_TXD1 open(floating) Leave this pin XETH0_TXD2 open(floating) Leave this pin XETH0_TXD3 open(floating) GNSS Control & Debug Pins G4 GNSS_LNA_EN_L1 1.8 O - GNSS_LNA_Control E4 GNSS_LNA_EN_L5 1.8 O - GNSS_LNA_Control C26 GNSS_UART_TX 1.
Leave this pin I8 XCP_GPIO_47 1.8 B B25 XCP_GPIO_57 1.8 B - AP / CP GPIO B27 XCP_GPIO_60 1.8 B - AP / CP GPIO P7 XCP_GPIO_48 1.8 O - AP / CP GPIO GPIO_ANT_SW1 AP_GPIO P9 XCP_GPIO_49 1.8 O - AP / CP GPIO GPIO_ANT_SW2 AP_GPIO Q6 XCP_GPIO_54 1.8 O - AP / CP GPIO GPIO_ANT_SW3 AP_GPIO Q8 XCP_GPIO_55 1.8 O - AP / CP GPIO GPIO_ANT_SW4 AP_GPIO P5 XCP_GPIO_63 1.8 B - AP / CP GPIO XCP_GPIO_RSV1 AP_GPIO M4 XCP_GPIO_50 1.
D17 AP_GPIO_SDIO1_CMD 1.8 B - AP_GPIO B17 AP_GPIO_SDIO1_D0 1.8 B - AP_GPIO E18 AP_GPIO_SDIO1_D1 1.8 B - AP_GPIO D19 AP_GPIO_SDIO1_D2 1.8 B - AP_GPIO D15 AP_GPIO_SDIO1_D3 1.8 B - AP_GPIO Leave this pin open(floating) Leave this pin open(floating) Leave this pin open(floating) Leave this pin open(floating) Leave this pin open(floating) AP_GPIO AP_GPIO AP_GPIO AP_GPIO AP_GPIO SPI Flash (eAP emergency Boot Download. Connect to EDGE connector) O4 CP_SPI1_TXD_FLASH 1.
A30 GND - - - GND GND GND A32 GND - - - GND GND GND A34 GND - - - GND GND GND B5 GND - - - GND GND GND C4 GND - - - GND GND GND C24 GND - - - GND GND GND D1 GND - - - GND GND GND D3 GND - - - GND GND GND D7 GND - - - GND GND GND D25 GND - - - GND GND GND D37 GND - - - GND GND GND E14 GND - - - GND GND GND E22 GND - - - GND GND GND E24 GND - - - GND GND GND E26 GND - - - GND GND GND E28 GN
J1 GND - - - GND GND GND J3 GND - - - GND GND GND J9 GND - - - GND GND GND J11 GND - - - GND GND GND J13 GND - - - GND GND GND J15 GND - - - GND GND GND J17 GND - - - GND GND GND J19 GND - - - GND GND GND J21 GND - - - GND GND GND J23 GND - - - GND GND GND J25 GND - - - GND GND GND J27 GND - - - GND GND GND J29 GND - - - GND GND GND J31 GND - - - GND GND GND J37 GND - - - GND GND GND K2 G
N13 GND - - - GND GND GND N15 GND - - - GND GND GND N19 GND - - - GND GND GND N21 GND - - - GND GND GND N23 GND - - - GND GND GND N25 GND - - - GND GND GND N27 GND - - - GND GND GND N37 GND - - - GND GND GND O10 GND - - - GND GND GND O16 GND - - - GND GND GND O18 GND - - - GND GND GND O20 GND - - - GND GND GND O22 GND - - - GND GND GND O24 GND - - - GND GND GND O26 GND - - - GND GND GND O2
T19 GND - - - GND GND GND T21 GND - - - GND GND GND T23 GND - - - GND GND GND T25 GND - - - GND GND GND T27 GND - - - GND GND GND T29 GND - - - GND GND GND T31 GND - - - GND GND GND T37 GND - - - GND GND GND U2 GND - - - GND GND GND U4 GND - - - GND GND GND U6 GND - - - GND GND GND U8 GND - - - GND GND GND U10 GND - - - GND GND GND U12 GND - - - GND GND GND U14 GND - - - GND GND GND U16 G
X7 GND - - - GND GND GND X9 GND - - - GND GND GND X11 GND - - - GND GND GND X13 GND - - - GND GND GND X15 GND - - - GND GND GND X17 GND - - - GND GND GND X19 GND - - - GND GND GND X21 GND - - - GND GND GND X23 GND - - - GND GND GND X25 GND - - - GND GND GND X27 GND - - - GND GND GND X29 GND - - - GND GND GND X31 GND - - - GND GND GND X33 GND - - - GND GND GND A36 NC - - - NC B3 NC - - -
2.2 LGA Interface guideline 2.2.1. ANT port Place 3 matching components close to ANT port (Figure 2-3) to improve RF performance Figure 2-3 Matching components at ANT port ANT NAD LGA 100pF N.C N.C 2.2.2 MIPI If TCU use Qorvo ANT switch, USID pin of ANT switch should be connected to VIO pin, to distinguish it from the ANT switch in NAD side. 2.2.3 PCIe Place 220nF series capacitor close to MTK pin if they do not have any recommendation. © SAMSUNG Electronics Co., Ltd.
2.3 CP HW Revision Figure 2-4 CP HW Revision 2.4 USB Interface S5123 chipset do not support USB. The USB interface cannot be used in the NAD because related functions are not supported in the S5123 chipset. © SAMSUNG Electronics Co., Ltd.
3 Power Interface 3.1 POWER Interface 3.1.1 Overview The power supply part of the module contains: VPH_PWR pin for the power supply input VDD_1P8_AP pin is pull up for PCIe clock request signal VLDO2_CP_VDD180 pin for power output VLDO10_CP_USIM0 pin for USIM0 card power output Table 3-1 Definitions of the pins on the power supply interface Pin No. Pin Name Pad Description Comment Q32, O34, R33 VPH_PWR PI Power supply input. The Input power is 4.0–4.4 V.
3.1.2 Input Power Supply Interface Input power supply interfaces are VPH_PWR. When the module works normally, power is supplied through the VPH_PWR pins and the voltage ranges from 4.0 V to 4.4 V (typical value is 4.2 V). When the module works at GSM mode and transmits signals at the maximum power, the transient peak current may reach 2.75A due to the differences in actual network environments. In this case, the input power voltage will drop.
3.2 UART and SPI Interface The module provides one 2-wire UART interface. As the UART interface supports signal control through standard modem handshake, Software commands are entered and serial communication is performed through the UART interface. The baud rates supported are shown below: 300 bps, 600 bps, 1200 bps, 2400 bps, 4800 bps, 9600 bps, 19200 bps, 38400 bps, 57600 bps, 115200 bps, 230400 bps, 460800 bps, 921600 bps, 2764800 bps. Table 3-3 UART interface signals Pin No.
3.3 USIM Card Interface The module provides a USIM card interface complying with the ISO 7816-3 standard and supports both Class B and Class C USIM cards. Tabl e 3-5 USIM card interface signals Pin No. Pin Name Pad Type Description Typ. (V) Q24 SIM0_RST O USIM card reset 1.8/2.85 P23 SIM0_DATA I/O USIM card data 1.8/2.85 Q22 SIM0_CLK O USIM card clock 1.8/2.85 3.4 Audio Interface The module provides one PCM (Pulse Code Modulation) digital audio interface.
Hardware Guide 3.5 PCIe Interface The module provides PCIe interface. - PCIe base specification, Revision 4.0 specification, version 1.
Hardware Guide Figure 3-6 Recommended circuit of the PCIe interface(eAP) Figure 3-7 Recommended circuit of the PCIe interface(eAP DSDA) © SAMSUNG Electronics Co., Ltd.
Hardware Guide 4 RF Specification 4.1 About This Chapter This chapter describes the RF specifications of the module, including: Operating Frequencies Conducted RF Measurement Conducted Rx Sensitivity and Tx Power Antenna Design Requirements 4.2 Operating Frequencies Table 4-1 ~Table 4-2 show the RF bands supported. 4.2.
Hardware Guide LTE Band 8 880–915 MHz 925–960 MHz LTE Band 9 1749.49 – 1784.9 MHz 1844.9–1879.9 MHz LTE Band 10 1710 - 1770 MHz 2110–2170 MHz LTE Band 12 699–716 MHz 729–746 MHz LTE Band 13 777–787 MHz 746–756 MHz LTE Band 17 704–716 MHz 734–746 MHz LTE Band 18 815–830 MHz 860–875 MHz LTE Band 19 830–845 MHz 875–890 MHz LTE Band 20 832–862 MHz 791–821 MHz LTE Band 21 1447.9–1462.9 MHz 1495.9–1510.
Hardware Guide 5G n41 2496 - 2690 MHz 2496 - 2690 MHz 5G n66 1710 - 1780 MHz 2110 - 2200 MHz 5G n71 663-698 MHz 617-652 MHz 5G n77 3300-4200 MHz 3300-4200 MHz 5G n78 3300-3800 MHz 3300-3800 MHz 4.2.2 Data Services and Power Class Feature Description Data Services 5G sub-6GHz (DL 3.6Gbps, UL 550Mbps) LTE DL Cat20, UL Cat18 (DL 1.95Gbps, UL 211Mbps) DC-HSPA+: 42 Mbps/5.76 Mbps HSPA+: 21 Mbps/5.76 Mbps EDGE: DL:236.8 kbps/UL: 236.8 kbps (Multi-slot Class 12) GPRS: DL: 85.6 kbps/UL: 85.
Hardware Guide Power Class LTE Output power (according to Release 8): Class 3 (+23 dBm± 2 dB) for FDD LTE Band 1 Class 3 (+23 dBm± 2 dB) for FDD LTE Band 2 Class 3 (+23 dBm± 2 dB) for FDD LTE Band 3 Class 3 (+23 dBm± 2 dB) for FDD LTE Band 4 Class 3 (+23 dBm± 2 dB) for FDD LTE Band 5 Class 3 (+23 dBm± 2 dB) for FDD LTE Band 7 Class 3 (+23 dBm± 2 dB) for FDD LTE Band 8 Class 3 (+23 dBm± 2 dB) for FDD LTE Band 9 Class 3 (+23 dBm± 2 dB) for FDD LTE Band 10 Class 3 (+23 dBm± 2 dB) for FDD LTE Band 12 Class
Hardware Guide Feature Description Power Class 5G Class 3 (+23 dBm± 2 dB) for n1 Class 3 (+23 dBm± 2 dB) for n2 Class 3 (+23 dBm± 2 dB) for n3 Class 3 (+23 dBm± 2 dB) for n5 Class 3 (+23 dBm± 2 dB) for n7 Class 3 (+23 dBm± 2 dB) for n8 Class 3 (+23 dBm± 2 dB) for n20 Class 3 (+23 dBm± 2 dB) for n25 Class 3 (+23 dBm +2/-2.5 dB) for n28 Class 3 (+23 dBm± 2 dB) for n38 Class 3 (+23 dBm± 2 dB) for n41 Class 3 (+23 dBm± 2 dB) for n66 Class 3 (+23 dBm +2/-2.
Hardware Guide 4.2.
Hardware Guide 4.3 Conducted RF Measurement 4.3.1 Test Environment Test instrument Keysight 8960, R&S CMW500, Anritsu MT8820C Power supply Agilent 66319 RF cable for testing L08-C014-350 of DRAKA COMTEQ or Rosenberger Cable length: 29 cm 4.3.2 Test Standards The modules meet all 3GPP test standards relating to 2G, 3G, 4G 5G. Each module passes strict tests at the factory and thus the quality of the modules is guaranteed. 4.4 Conducted Rx Sensitivity and Tx Power 4.4.
Hardware Guide UMTS Band 2 (BER < 0.1%) < –104.7 -109 UMTS Band 3 (BER < 0.1%) < –103.7 -109 UMTS Band 4 (BER < 0.1%) < –106.7 -109 UMTS Band 5 (BER < 0.1%) < –104.7 -109 UMTS Band 8 (BER < 0.1%) < –103.7 -109 UMTS Band 19 (BER < 0.1%) < –106.7 -109 © SAMSUNG Electronics Co., Ltd.
Hardware Guide Item 3GPP Test Value (dBm) Protocol Claim (dBm) Min.
Hardware Guide 4.4.2 Conducted Transmit Power / ACLR The conducted transmit power is another indicator that measures the performance of the module. The conducted transmit power refers to the maximum power that the module tested at the antenna port can transmit. According to the 3GPP protocol, the required transmit power varies with the power class. Table 4-5 list the required ranges of the conducted transmit power of the module under 4 V voltage and normal temperature.
Hardware Guide Item 3GPP Protocol Claim (dBm) Test Value (dBm) Min. Typ. Max.
Hardware Guide Table 4-4 Conducted ACLR value of OEM NAD at 25℃ Item Test condition Test Value (dBm) Min. Typ. Max. UMTS Band 1 Adjacent channel Leakage Power_Ratio @ +10MHz Offset -42.2 UMTS Band 2 Adjacent channel Leakage Power_Ratio @ +10MHz Offset -42.2 UMTS Band 3 Adjacent channel Leakage Power_Ratio @ +10MHz Offset -42.2 UMTS Band 4 Adjacent channel Leakage Power_Ratio @ +10MHz Offset -42.2 UMTS Band 5 Adjacent channel Leakage Power_Ratio @ +10MHz Offset -42.
Hardware Guide Item 3GPP Protocol Claim (dBm) LTE Band 1 Test Value (dBm) Min. Adjacent Channel Leakage power Ratio_RB_LOW_UTRA Typ. Max. -35.2 LTE Band 2 Adjacent Channel Leakage power Ratio_RB_LOW_UTRA -35.2 LTE Band 3 Adjacent Channel Leakage power Ratio_RB_LOW_UTRA -35.2 LTE Band 4 Adjacent Channel Leakage power Ratio_RB_LOW_UTRA -35.2 LTE Band 5 Adjacent Channel Leakage power Ratio_RB_LOW_UTRA -35.2 LTE Band 7 Adjacent Channel Leakage power Ratio_RB_LOW_UTRA -35.
Hardware Guide 4.5 Antenna Design Requirements 4.5.1 Antenna Design Indicators 4.5.1.1 Antenna efficiency The efficiency of an antenna is a ratio of the power delivered to the antenna relative to the power radiated from the antenna. A high efficiency antenna has most of the power present at the antenna's input radiated away. A low efficiency antenna has most of the power absorbed as losses within the antenna, or reflected away due to impedance mismatch. 4.5.1.
Hardware Guide 4.5.2 Interference Besides the antenna performance, the interference on the user board also affects the radio performance (especially the TIS) of the module. To guarantee high performance of the module, the interference sources on the user board must be properly controlled. On the user board, there are various interference sources, such as the LCD, CPU, audio circuits, and power supply. All the interference sources emit interference signals that affect the normal operation of the module.
Hardware Guide 4.5.3 GSM/WCDMA/LTE Antenna Requirements The antenna for the module must fulfill the requirements as shown in Table 4-10 . Table 4-5 Requirements for GSM/WCDMA/LTE antenna Frequency range Depending on frequency band(s) provided by the network operator, the end user must use the most suitable antenna for that/those band(s).
Hardware Guide Bandwidth of 250 MHz in WCDMA/LTE Band 1 diversity antenna 140 MHz in W CDMA/LTE Band 2 170 MHz in W CDMA/LTE Band 3 445 MHz in W CDMA/LTE Band 4 70 MHz in W CDMA/LTE Band 5 80 MHz in W CDMA/LTE Band 8 60 MHz in W CDMA/LTE Band 19 190 MHz in LTE Band 7 130 MHz in LTE Band 9 460 MHz in LTE Band 10 47 MHz in LTE Band 12 41 MHz in LTE Band 13 42 MHz in LTE Band 17 60 MHz in LTE Band 18 71 MHz in LTE Band 20 63 MHz in LTE Band 21 145 MHz in LTE Band 25 80 MHz in LTE Band 26 100 MHz in LTE Band
Hardware Guide 4.6 Link budget 4.6.1 Tx link budget Table 4-6 Tx link budget MPR 0 © SAMSUNG Electronics Co., Ltd.
Hardware Guide 4.7 PCB Recommendation This chapter provides a guide for optimizing RF line. Table 4-7 Recommend RF guide Not recommend - RF Signals and PCIE line are not isolated and it will cause cross talk. - - - RF Signals are not shielded with GND. There are not GND Via next to the signal lines. This Impedance mismatch causes High insertion loss. RF Signals and too many digital/analog lines are not isolated.
Hardware Guide Not recommend - GND Traces are needed to shield outline of PCB. GND shielding and more GND Vias can prevent the board from EMC issue(RE, ESD, noise protect etc.) Recommend Layer 1 Layer 2 - Clock line is not shielded with GND. This can be a noise source and cause RX sensitivity interference. Layer 3 - Signal Vias are not shielded with GND. These can cause cross talk (RX sensitivity interference) © SAMSUNG Electronics Co., Ltd.
Hardware Guide 5 Electrical Features 5.1 About This Chapter This chapter describes the electrical features of the interfaces in the module, including: Absolute Ratings Operating and Storage Temperatures and Humidity Electrical Features of Application Interfaces Power Supply Features EMC and ESD Features 5.2 Absolute Ratings Table 5-1 lists the absolute ratings for the module. Using the module beyond these conditions may result in permanent damage to the module.
Hardware Guide 5.4 Electrical Features of Application Interfaces Table 5-3 Electrical features of Digital Pins(GPIO/PCM/UART/SPI/SIM/Control GPIO) Parameter Description Min. Max. VIH Logic high-level input voltage 0.7 x DVDD DVDD + 0.3 V VIL Logic low-level input voltage –0.3 0.3 x DVDD V 0.8 x DVDD DVDD V VSS 0.2 x DVDD V VOH VOL Logic high-level output Voltage Logic low-level output voltage Unit 5.5 Power Supply Features 5.5.
Hardware Guide 5.5.2 Power Consumption Table 5-6 Average current consumption Description Bands Max.
Hardware Guide Description Bands Max.
Hardware Guide Description Bands Max.
Hardware Guide Description Bands Max.
Hardware Guide Description Max.
Hardware Guide 5.6 EMC and ESD Features Electrostatic Discharge (ESD) is an electrical transient that poses a serious threat to electronic circuits. The circuit must be configured to protect NAD Module from electrical damage or ESD. To protect the circuit from ESD, TVS Diode should be added to RF, antenna port, USIM, USB port. An integrated ground plane is necessary for EMC design.
Hardware Guide 6 Package Information 6.1 Dimensions Figure 6-1 Dimension © SAMSUNG Electronics Co., Ltd.
Hardware Guide 6.2 Shield-can information This chapter describe shield can information for WAVE NAD. - Shield-can material i) Frame : C7701 1/2H T0.20 (Nickel Silver) ii) Cover : SUS304 (Stainless) Figure 6-2 Shield-can cover © SAMSUNG Electronics Co., Ltd.
Hardware Guide 6.3 Packaging Figure 6-3 Packaging © SAMSUNG Electronics Co., Ltd.
Hardware Guide 6.4 Label Figure 6-4 Label 6.5 Storage Guidelines The module must be properly stored and sealed in the vacuum package under temperatures below 40°C and relative humidity below 90% to ensure weldability. 6.6 Moisture Sensitivity Moisture Sensitivity Level 3 After unpacking, the module shall be assembled within 168 hours under environmental conditions where the temperature is less than 30°C and the relative humidity is less than 60%.
Hardware Guide 7 Certification This chapter describes the status of wave NAD module approval. 7.1 Certifications Table 7-1 Product certifications Certification Status GCF CE RoHS REACH FCC IC CCC KCC Jate Telec 7.2 FCC/IC Regulatory notices Modification statement The FCC requires the user to be notified that any changes or modifications made to this device that are not expressly approved by Samsung Electronics Co. & Harman could void the user's authority to operate the equipment.
Hardware Guide ISED Canada requires the user to be notified that any changes or modifications made to this device that are not expressly approved by Samsung Electronics Co. & Harman could void the user's authority to operate the equipment. ⚠ Manufacturers of mobile or fixed devices incorporating these modules are authorized to use the ISED Canada Certificates of this series modules for their own final products according to the conditions referenced in the certificates.
Guide This is mandatory to meet the SAR requirements for portable devices. to the specificHardware portable device. Changes or modifications not expressly approved by the party responsible for compliance could void the user's authority to operate the equipment. ⚠ Avis d'Innovation, Sciences et Développement économique Canada (ISDE) Cet appareil numérique de classe B est conforme aux normes canadiennes CAN ICES-3(B) / NMB-3(B).
Hardware Guide Model : SA-N9000 FCC ID: T8GSAN9000 IC ID: 6434A-SAN9000 8 Safety information 8.1 Safety information Ensure that this product is only used in authorized countries and in required environments. Avoid use in the following areas as it may cause problems when used elsewhere than authorized. - It can interfere with other electronic devices in the environment such as aircraft, hospitals, etc.
Hardware Guide 9 Software information 9.1 AT Command Table 8-1 AT Command List Command H/W REV SKU NAD S/W Version TX AT+HWREV AT+CPSKU AT+CGMR © SAMSUNG Electronics Co., Ltd.
Hardware Guide 10 Acronyms and Abbreviations Acronym or Abbreviation Expansion 3GPP Third Generation Partnership Project 8P SK 8 Phase Shift Keying ADC Analog To Digital Converter AMPR Additional Maximum Power Reduction AP Access Point AUX Auxiliary BC Band Class BER Bit Error Rate BLER Block Error Rate BIOS Basic Input Output System CA Carrier Aggregation CCC China Compulsory Certification CE European Conformity CMOS Complementary Metal Oxide Semiconductor CPU Central Proces
Hardware Guide Acronym or Abbreviation Expansion EDGE Enhanced Data Rate for GSM Evolution EGSM Extended GSM EMC Electromagnetic Compatibility ENIG Electroless Nickel Immersion Gold EPA Electrostatic Discharge Protected Area ESD Electrostatic Discharge E SIM Embedded Subscriber Identity Module EU European Union EVDO Evolution Data Optimized FCC Federal Communications Commission FDD Frequency Division Duplex GCF Global Certification Forum GMSK Gaussian Minimum Shift-frequency Keyi
Hardware Guide Acronym or Abbreviation Expansion JTAG Joint Test Action Group LCD Liquid Crystal Display LDO Low Dropout Regulator LED Light Emitting Diode LGA Land Grid Array LPF Low Pass Filter LTE Long Term Evolution MCP Multi Chip Package MCS Modulation and Coding Scheme MIMO Multiple Input-Multiple Output MPR Maximum Power Reduction MO Mobile Originated MT Mobile Terminated NC Not Connected NR New Radio NSMD Non Solder Mask Defined OC Open Collector PA Power Amplif
Hardware Guide Acronym or Abbreviation Expansion RoHS Restriction of the Use of Certain Hazardous Substances REACH Registration, Evaluation, Authorization and Restriction of Chemicals RSE Radiated Spurious Emission RUIM Removable User Identity Module RX Receive SAW Surface Acoustic Wave SIMO Single Input Multiple Output SMS Short Message Service SMT Surface Mounting Technology TBD To Be Det ermined TCU Telematics Control Unit TDD Time Division Duplex TIS Total Isotropic Sensitivi
Hardware Guide * Hardware Guide Change list [2020.02.24 v0.7] 1) p.39 RF support band update : LTE DLCA support band removed, 5A-40A-41A(CHINA, ROW SKU) 2) p.40 RF support band update : LTE ULCA support band removed, 1A-19A, 1A-42A(ECE SKU) 3) p.14 LGA Pin Map Update PIN # BMW WAVE C2.
Hardware Guide L7 XCP_GPIO_RSV6 XCP_GPIO_62 R25 AP_26M XCP_GPIO_61 R27 PM_WRSTBI XCP_GPIO_58 M32 PCIE1_RST_N AP_XEINT_0 G6 AP_CP_WAKE AP_XEINT_1 G8 AP2CP_NOTIFY_ACTVIE AP_XEINT_2 G10 Reserved AP_XEINT_3 G12 MCU2CP_WAKEUP AP_XEINT_4 E16 XMMC_CARD1_CMD AP_GPIO_SDIO0_CLK B19 XMMC_CARD0_D3 AP_GPIO_SDIO0_CMD C18 XMMC_CARD0_D0 AP_GPIO_SDIO0_D0 E20 XMMC_CARD1_D0 AP_GPIO_SDIO0_D1 C16 XMMC_CARD0_CLK AP_GPIO_SDIO0_D2 C14 XMMC_CARD0_CMD AP_GPIO_SDIO0_D3 B15 XMMC_CARD0_D1 AP_
Hardware Guide [2020.04.10 v09] 1) p.30 USB Interface add [2020.05.06 v10] 1) p.8 Global sku support band updated 2) p.45 Global sku ENDC support band updated 3) p.53 Safety updated 4) CHN, Global sku n79 removed [2020.10.12 v11] 1) p.21 Pin description change R11 : NAD2_SPI_MISO G8 : AP_CP2_DUMP_NOTI_n G10 : AP_CP2_ACTIVE 2) p.22 H9 : RC Removed p.23 M30 : EP Removed 3) p.21 3gpp test low temperature revised –20°C ~ +55°C -> –10°C ~ +55°C 4) p.
