User's Manual

Pro
d
Mod
ELS
P
to 2
M
mod
u
ELS
P
Ame
r
can
b
E
l
No
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
d
uct Name:EL
el No.: EL
S
P
01 is a 2.4GH
z
M
bps. The high-
u
le has been m
a
P
01 is Norway-i
r
ica, it's max tr
a
b
e increased b
y
l
ectrical
.
Pa
r
R
F
A
V
O
p
Pr
o
Int
e
P
o
C
o
M
e
Tr
a
R
a
Tu
E
m
R
e
C
o
E
m
R
e
R
S
An
O
p
O
p
St
o
EL
S
S-Module-01
S
P01
z
SMD wireless
performance o
n
a
ss produced s
mported from
N
a
nsmitted powe
r
y
10dB. Also, it'
s
param
e
r
ameters name
F
chip
V
and LNA Ch
i
p
erating frequ
e
o
duction tech
n
e
rface
o
wer supply
o
mmunication
e
asured dista
n
a
nsmitted po
w
a
te
rn-off current
m
ission curren
e
ceive current
o
mmunication
m
ission Len
g
e
ceive Lengt
S
SI supported
tenna
p
erating Tem
p
p
erating Humi
d
o
rage temper
a
S
P01 R
F
module with fu
n
n
board antenna
moothly, and c
a
N
ordic. Equippe
d
r
is up to 7dBm
s
small size is c
o
e
ters
P
N
i
p
R
e
ncy 2
4
n
ology l
e
2
x
1
.
level 0
.
n
ce 1
0
w
er ≤
1
2
5
1
.
t 3
5
2
0
interface S
g
th
S
1
~
h
S
1
~
N
3
.
A
p
erature
-
d
ity
3
a
ture
-
F
Modul
e
n
ction for recei
v
is included in
M
a
n be used for
v
d
with 20dBm
p
(conform to F
C
o
nvenient for e
m
arameter
rf24l01P
R
FX2401
4
04~2478 M
H
e
ad-free, SMT
x
10x2.54mm
.
9~3.6V DC
.
7VCC~5V
0
0m+
1
0dBm
5
0K~2Mbps
.
0uA
5
mA
0
mA
PI
ingle Data Pa
~
32 Bytes
ingle Data Pa
~
32 Bytes
onsupport
.
0dBi PCB PI
F
ntenna
-
10℃～+40℃
3
5﹪～95﹪R
H
-
40℃～+125
℃
e
User
M
v
ing and transm
M
odule, which i
s
v
arious applicat
i
p
ower amplificat
C
CID and CE ce
m
bedded devel
o
Note
Nordi
c
Rfaxi
s
H
z
SMT
Note:
perm
a
VCC i
n
Norm
a
witho
u
Cond
u
3 leve
nRF2
4
level
Max r
a
cket
3 leve
cket
3level
Supp
o
F
A
H
℃
M
anual
itting. It has a s
m
s
accurate at i
m
i
ons scenarios.
ion chip of RF
X
rtification) and
t
o
pment.
c
s
Module will b
e
a
nently, if the
v
n
dicates sup
p
a
l Mode(Sunn
y
u
t interference
u
cted Emiss
i
l adjustable(
m
4
L01P set to
p
a
te up to 10M
b
l FIFO
FIFO
o
rt simple pac
k
m
all size, and
h
m
pedance matc
h
The nRF24LO
1
X
2401 chip imp
o
t
he receiving s
e
e
damaged
v
oltage is ove
p
ly voltage
y day, circu
m
e
)
i
on Test
m
odulated via
f
p
ower down,
C
b
ps
k
et loss only
h
igh rate up
h
ing. This
1
chip in
o
rted from
e
nsitivity
r 3.6V
m
stance
f
irmware)
C
E low