Datasheet

1 CMF10120D Rev. A
CMF10120D-Silicon Carbide Power MOSFET
Z-FeT
TM
MOSFET
N-Channel Enhancement Mode
Features
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low R
DS(on)
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benets
• Higher System Efciency
• Reduced Cooling Requirements
• Increased System Switching Frequency
Applications
• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
• Switch Mode Power Supplies
Package
TO-247-3
Maximum Ratings (T
C
= 25˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
I
D
Continuous Drain Current
24
A
V
GS
@20V, T
C
= 25˚C
Fig. 10
13
V
GS
@20V, T
C
= 100˚C
I
Dpulse
Pulsed Drain Current 49 A
Pulse width t
P
limited by T
jmax
T
C
= 25˚C
E
AS
Single Pulse Avalanche Energy 1.2 J
I
D
= 10A, V
DD
= 50 V,
L = 20 mH
t
AR
limited by T
jmax
Fig. 15
E
AR
Repetitive Avalanche Energy 0.8 J
I
AR
Repetitive Avalanche Current 10 A
I
D
= 10A, V
DD
= 50 V, L = 15 mH
t
AR
limited by T
jmax
V
GS
Gate Source Voltage -5/+25 V
P
tot
Power Dissipation 134 W T
C
=25˚C Fig. 9
T
J
, T
stg
Operating Junction and Storage Temperature
-55 to
+135
˚C
T
L
Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s
M
d
Mounting Torque
1
8.8
Nm
lbf-in
M3 or 6-32 screw
V
DS
= 1200 V
I
D(MAX)
= 24 A
R
DS(on)
= 160mΩ
Part Number Package
CMF10120D TO-247-3