Datasheet

ManualsBrandsAnalog Devices ManualsAnalogue SwitchesAnalogue Switch IC SPDT SC-70-

CMOS 1.8 V to 5.5 V, 2.5 Ω

SPDT Switch/2:1 Mux in Tiny SC70 Package

ADG779

Rev. A

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FEATURES

1.8 V to 5.5 V single supply

2.5 Ω on resistance

0.75 Ω on-resistance flatness

−3 dB bandwidth >200 MHz

Rail-to-rail operation

6-lead SC70 package

Fast switching times

20 ns

OFF

6 ns

Typical power consumption (<0.01 μW)

TTL/CMOS compatible

APPLICATIONS

Battery-powered systems

Communication systems

Sample hold systems

Audio signal routing

Video switching

Mechanical reed relay replacements

FUNCTIONAL BLOCK DIAGRAM

ADG779

SWITCHES SHOWN FOR

A LOGIC 1 INPUT

02491-001

Figure 1.

GENERAL DESCRIPTION

The ADG779 is a monolithic CMOS SPDT (single-pole,

double-throw) switch. This switch is designed on a submicron

process that provides low power dissipation yet gives high

switching speed, low on resistance, and low leakage currents.

The ADG779 operates from a single supply range of 1.8 V to

5.5 V, making it ideal for use in battery-powered instruments

and with the new generation of DACs and ADCs from Analog

Devices, Inc.

Each switch of the ADG779 conducts equally well in both

directions when on. The ADG779 exhibits break-before-make

switching action.

Because of the advanced submicron process, −3 dB bandwidth

of greater than 200 MHz can be achieved.

The ADG779 is available in a 6-lead SC70 package.

PRODUCT HIGHLIGHTS

1. Tiny 6-Lead SC70 Package.

2. 1.8 V to 5.5 V Single-Supply Operation. The ADG779

offers high performance, including low on resistance and

fast switching times, and is fully specified and guaranteed

with 3 V and 5 V supply rails.

3. Ver y Low R

(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V

operation, R

is typically 40 Ω over the temperature range.

4. On-Resistance Flatness (R

FLAT (ON)

) (0.75 Ω typ).

5. −3 dB Bandwidth > 200 MHz.

6. Low Power Dissipation. CMOS construction ensures low

power dissipation.

7. 14 ns Switching Times.

Summary of content (12 pages)

PAGE 1
CMOS 1.8 V to 5.5 V, 2.5 Ω SPDT Switch/2:1 Mux in Tiny SC70 Package ADG779 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.8 V to 5.5 V single supply 2.5 Ω on resistance 0.75 Ω on-resistance flatness −3 dB bandwidth >200 MHz Rail-to-rail operation 6-lead SC70 package Fast switching times tON 20 ns tOFF 6 ns Typical power consumption (<0.01 μW) TTL/CMOS compatible ADG779 S2 D S1 SWITCHES SHOWN FOR A LOGIC 1 INPUT 02491-001 IN Figure 1.
PAGE 2
ADG779 TABLE OF CONTENTS Features .............................................................................................. 1 Pin Configuration and Function Descriptions..............................6 Applications....................................................................................... 1 Terminology .......................................................................................7 Functional Block Diagram ..............................................................
PAGE 3
ADG779 SPECIFICATIONS VDD = 5 V ± 10%, GND = 0 V 1 Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match Between Channels (ΔRON) 25°C B Version −40°C to +85°C 0 V to VDD 2.5 5 0.1 LEAKAGE CURRENTS 2 Source Off Leakage IS (Off ) Channel On Leakage ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 1.2 ±0.05 ±0.05 nA typ nA typ 2.4 0.8 V min V max μA typ μA max VIN = VINL or VINH ±0.
PAGE 4
ADG779 VDD = 3 V ± 10%, GND = 0 V 1 Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match Between Channels (ΔRON) 25°C 6 B Version −40°C to +85°C 0 V to VDD 7 10 0.1 0.8 On-Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS 2 Source Off Leakage IS (Off ) Channel On Leakage ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON 2.5 ±0.01 ±0.
PAGE 5
ADG779 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 3. Parameter VDD to GND Analog, Digital Inputs 1 Peak Current, S or D Continuous Current, S or D Operating Temperature Range Industrial (B Version) Storage Temperature Range Junction Temperature SC70 Package, Power Dissipation θJA Thermal Impedance θJC Thermal Impedance Lead Temperature, Soldering Vapor Phase (60 sec) Infrared (15 sec) Reflow Soldering (Pb-free) Peak Temperature Time at Peak Temperature 1 Rating −0.3 V to +7 V −0.
PAGE 6
ADG779 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS IN 1 6 S2 VDD 2 5 D TOP VIEW (Not to Scale) GND 3 4 S1 Figure 2. Pin Configuration Table 5. Pin Function Descriptions Pin No. 1 2 3 4 5 6 Mnemonic IN VDD GND S1 D S2 Description Logic Control Input. Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. Can be an input or an output. Drain Terminal. Can be an input or an output. Source Terminal. Can be an input or an output. Rev.
PAGE 7
ADG779 TERMINOLOGY VDD Most positive power supply potential. CD (Off) Off switch drain capacitance. Measured with reference to ground. IDD Positive supply current. CD, CS (On) On switch capacitance. Measured with reference to ground. GND Ground (0 V) reference. CIN Digital input capacitance. S Source terminal. Can be an input or an output. tON Delay time between the 50% and 90% points of the digital input and switch on condition. D Drain terminal. Can be an input or an output.
PAGE 8
ADG779 TYPICAL PERFORMANCE CHARACTERISTICS 0.15 6.0 5.5 VDD = 2.7V VDD = 5V VD = 4.5V/1V VS = 1V/4.5V TA = 25°C 5.0 0.10 4.5 VDD = 4.5V VDD = 3V 3.5 CURRENT (nA) RON (Ω) 4.0 3.0 2.5 VDD = 5V 2.0 ID, IS (ON) 0.05 0 1.5 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD OR VS – DRAIN OR SOURCE VOLTAGE (V) –0.05 02491-003 0 Figure 3. On Resistance as a Function of VD (VS) Single Supplies 10 20 30 40 50 60 TEMPERATURE (°C) 70 80 90 Figure 6.
PAGE 9
ADG779 –30 –40 0 VDD = 5V, 3V VDD = 5V –60 ON RESPONSE (dB) OFF ISOLATION (dB) –50 –70 –80 –90 –100 –2 –4 –110 100k 1M 10M FREQUENCY (Hz) 100M –6 10k 02491-009 –130 10k Figure 9. Off Isolation vs. Frequency VDD = 5V, 3V –60 –70 –80 –90 –100 –110 –120 100k 1M 10M FREQUENCY (Hz) 100M 02491-010 CROSSTALK (dB) –50 –130 10k 1M 10M FREQUENCY (Hz) Figure 11. On Response vs. Frequency –30 –40 100k Figure 10. Crosstalk vs. Frequency Rev.
PAGE 10
ADG779 TEST CIRCUITS IDS V1 D A S D ID (OFF) A S VD VS 0.1µF Figure 14. On Leakage VDD VIN 50% 50% VDD RL 300Ω IN CL 35pF VOUT 90% 90% VOUT tON GND tOFF 02491-015 D S VS Figure 15. Switching Times S1 VS1 VDD VIN VDD D S2 VS2 RL2 300Ω IN VIN D2 CL2 35pF VOUT VOUT 50% 0V 50% 50% 0V tD GND Figure 16. Break-Before-Make Time Delay, tD Rev. A | Page 10 of 12 50% tD 02491-016 0.1µF A VD Figure 13. Off Leakage Figure 12.
PAGE 11
ADG779 VDD 0.1µF 0.1µF NETWORK ANALYZER VDD S S VS D RL 50Ω OFF ISOLATION = 20 log VIN VOUT VS INSERTION LOSS = 20 log VDD 0.1µF VDD S1 S2 D 50Ω IN CHANNEL-TO-CHANNEL CROSSTALK = 20 log R 50Ω GND VOUT VS 02491-018 RL 50Ω Figure 18. Channel-to-Channel Crosstalk Rev. A | Page 11 of 12 VOUT VOUT WITH SWITCH VOUT WITHOUT SWITCH Figure 19. Bandwidth Figure 17.
PAGE 12
ADG779 OUTLINE DIMENSIONS 2.20 2.00 1.80 1.35 1.25 1.15 6 5 4 1 2 3 2.40 2.10 1.80 PIN 1 0.65 BSC 1.30 BSC 1.00 0.90 0.70 1.10 0.80 0.30 0.15 0.10 MAX 0.40 0.10 SEATING PLANE 0.22 0.08 0.46 0.36 0.26 0.10 COPLANARITY COMPLIANT TO JEDEC STANDARDS MO-203-AB Figure 20.